Plasma Doping Using A Solid Dopant Source

• US 20180130659A1
• Filed: 03/15/2017
• Published: 05/10/2018
• Est. Priority Date: 11/08/2016
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Salimian, Siamak, Gao, Qi, Maynard, Helen L.
• Granted Patent: US 10,460,941 B2
• Time in Patent Office: Days
• CPC Class Codes: H01J 2237/3365 Plasma source implantation
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01L 21/2236 from or into a plasma phase

Abstract

A method of processing a workpiece is disclosed, where the interior surfaces of the plasma chamber are first coated using a conditioning gas that contains the desired dopant species. A working gas, which does not contain the desired dopant species, is then introduced and energized to form a plasma. This plasma is used to sputter the desired dopant species from the interior surfaces. This dopant species is deposited on the workpiece. A subsequent implant process may then be performed to implant the dopant into the workpiece. The implant process may include a thermal treatment, a knock in mechanism, or both.

Claims

1. A method of depositing a dopant species on a workpiece, comprising:

performing a conditioning process, the conditioning process comprising;

introducing a conditioning gas into a plasma chamber of an ion source, the conditioning gas comprising a dopant species; and

ionizing the conditioning gas in said plasma chamber so as to form a coating, which comprises the dopant species in solid form, on interior surfaces of the plasma chamber; and

performing a deposition process after the conditioning process, the deposition process comprising;

introducing a working gas into the plasma chamber after the coating is formed, wherein the working gas does not comprise the dopant species; and

ionizing the working gas in said plasma chamber to create ions and sputter the coating, such that the dopant species is deposited on the workpiece.

2. The method of claim 1, wherein the workpiece is not disposed in the plasma chamber during the conditioning process.

3. The method of claim 1, wherein the working gas comprises an inert gas.

4. A method of implanting a dopant species in a workpiece, comprising:

performing a conditioning process, the conditioning process comprising;

introducing a conditioning gas into a plasma chamber of an ion source, the conditioning gas comprising a dopant species; and

ionizing the conditioning gas in said plasma chamber so as to form a coating, which comprises the dopant species in solid form, on interior surfaces of the plasma chamber;

sputtering the coating so that the dopant species is deposited on the workpiece; and

implanting the dopant species into the workpiece.

5. The method of claim 4, wherein the implanting comprises exposing the workpiece to a thermal treatment.

6. The method of claim 5, wherein a capping layer is deposited on the workpiece prior to the exposing.

7. The method of claim 4, wherein the sputtering comprises:

introducing a working gas into the plasma chamber after the coating is formed, wherein the working gas does not comprise the dopant species; and

ionizing the working gas in said plasma chamber to create ions and sputter the coating, such that the dopant species is deposited on the workpiece.

8. The method of claim 7, wherein the implanting comprises negatively biasing the workpiece so as the cause ions of the working gas to drive in the dopant species.

9. The method of claim 8, further comprising exposing the workpiece to a thermal treatment after the negatively biasing.

10. The method of claim 9, wherein a capping layer is deposited on the workpiece after the negatively biasing and prior to the exposing.

11. The method of claim 7, wherein the working gas comprises an inert gas.

12. A method of processing a workpiece, comprising:

placing a workpiece in a plasma chamber; and

creating a plasma by energizing a working gas in the plasma chamber while the workpiece is disposed in the plasma chamber, wherein the plasma causes dopant species that coated interior surfaces of the plasma chamber to sputter and deposit on the workpiece.

13. The method of claim 12, wherein the working gas comprises an inert gas.

14. The method of claim 12, further comprising implanting the dopant species that is deposited on the workpiece.

15. The method of claim 14, wherein the implanting comprises exposing the workpiece to a thermal treatment.

16. The method of claim 15, wherein a capping layer is deposited on the workpiece prior to the exposing.

17. The method of claim 14, wherein the implanting comprises negatively biasing the workpiece so as the cause ions of the working gas to drive in the dopant species.

18. The method of claim 17, further comprising exposing the workpiece to a thermal treatment after the negatively biasing.

19. The method of claim 18, wherein a capping layer is deposited on the workpiece after the negatively biasing and prior to the exposing.

20. The method of claim 12, wherein the working gas does not comprise the dopant species.