THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE HAVING THE SAME
First Claim
1. A thin film transistor comprising:
- a first blocking layer disposed on a substrate;
an active pattern disposed on the first blocking layer, wherein the active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region;
a gate electrode disposed on the active pattern, wherein the channel region corresponds to a portion of the active pattern overlapped by the gate electrode; and
a source electrode connected to the source region, and a drain electrode connected to the drain region,wherein the active pattern includes a first part and a second part, wherein the first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.
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Abstract
A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.
10 Citations
36 Claims
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1. A thin film transistor comprising:
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a first blocking layer disposed on a substrate; an active pattern disposed on the first blocking layer, wherein the active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region; a gate electrode disposed on the active pattern, wherein the channel region corresponds to a portion of the active pattern overlapped by the gate electrode; and a source electrode connected to the source region, and a drain electrode connected to the drain region, wherein the active pattern includes a first part and a second part, wherein the first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a thin film transistor, the method comprising:
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forming a blocking layer on a substrate; forming a buffer layer over the blocking layer; forming a semiconductor layer on the buffer layer, the semiconductor layer including a first part and a second part, wherein the first part and the second part have different thicknesses from each other; forming a gate insulating layer over the semiconductor layer; forming a gate electrode covering a region of the semiconductor layer on the gate insulating layer; forming an active pattern by doping impurities on the substrate on which the gate electrode is formed, wherein the active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region; forming a source electrode connected to the source region; and forming a drain electrode connected to the drain region. - View Dependent Claims (18, 19, 20)
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21. A display device comprising:
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a display element; and a thin film transistor connected to the display element, wherein the thin film transistor includes; a first blocking layer disposed on a substrate; an active pattern disposed on the first blocking layer, wherein the active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region; a gate electrode disposed on the active pattern, wherein the channel region corresponds to a portion of the active pattern overlapping by the gate electrode; and a source electrode connected to the source region, and a drain electrode connected to the drain region, wherein the active pattern includes a first part and a second part, wherein the first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification