GATE DRIVING CIRCUIT AND SWITCHING POWER SUPPLY DEVICE

• US 20180131364A1
• Filed: 10/25/2017
• Published: 05/10/2018
• Est. Priority Date: 11/09/2016
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: KANEDA, Hirotoshi
• Granted Patent: US 10,469,067 B2
• Time in Patent Office: Days
• CPC Class Codes: H03K 17/08122 in field-effect transistor switches
• CPC Class Codes: H03K 17/08142 in field-effect transistor switches
• CPC Class Codes: H03K 17/166 Soft switching
• CPC Class Codes: H03K 17/302 in field-effect transistor switches

Abstract

A gate driving circuit is connected to a main switching element. The gate driving circuit includes a gate resistor. The gate resistor includes a voltage controlled resistor of which a resistance value is able to be continuously changed. A switching power supply device includes a gate driving circuit, a main switching element, and a freewheeling diode connected in reverse parallel to the main switching element.

Claims

1. A gate driving circuit that is connected to a main switching element and includes a gate resistor,

wherein the gate resistor includes a voltage controlled resistor of which a resistance value is able to be continuously changed.

2. The gate driving circuit according to claim 1, further comprising a control circuit configured to set a voltage value that is input to the voltage controlled resistor on the basis of an output current value of the main switching element.

3. The gate driving circuit according to claim 1, further comprising a control circuit configured to set a voltage value that is input to the voltage controlled resistor on the basis of a signal that is output from a signal source that drives the main switching element.

4. The gate driving circuit according to claim 1, wherein the voltage controlled resistor includes a field effect transistor.

5. A switching power supply device, comprising:

the gate driving circuit according to claim 1;

the main switching element; and

a freewheeling diode connected in reverse parallel to the main switching element,

wherein part of the main switching element and the freewheeling diode or all of the main switching element and the freewheeling diode are formed of a wide bandgap semiconductor.

6. The switching power supply device according to claim 5,

wherein the wide bandgap semiconductor is formed of silicon carbide, a gallium nitride-based material, a gallium oxide-based material, or diamond.