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SELF-ALIGNED MULTI-PATTERNING PROCESS FLOW WITH ALD GAPFILL SPACER MASK

  • US 20180138040A1
  • Filed: 11/11/2016
  • Published: 05/17/2018
  • Est. Priority Date: 11/11/2016
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a substrate having a core material patterned to form gaps and a target layer;

    depositing gapfill material conformally over the core material such that gapfill material is deposited in the gaps on the substrate;

    planarizing the substrate to form a planar surface comprising the gapfill material and the core material; and

    selectively etching the core material to form symmetrically shaped spacers used as a mask to etch the target layer,wherein the symmetrically shaped spacers having sidewalls substantially perpendicular to a top surface of the symmetrically shaped spacer.

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