TRENCH TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY DIODE
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Abstract
Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.
9 Citations
51 Claims
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1-30. -30. (canceled)
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31. A power semiconductor device, comprising:
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one or more first trench-gated transistors, each having a portion of a first-conductivity-type source region, and a first gate electrode which is capacitively coupled to a first body region to selectably form a first channel region therein, and a drain region; one or more second trench-gated transistors, each having another portion of said first-conductivity-type source region, and a second gate electrode which is capacitively coupled to a second body region to selectably form a second channel region therein, and a drain region; wherein said trench-gated transistors are integrated on a single semiconductor die; wherein said second body regions are deeper than said first body regions, and said second channel regions are longer than said first channel regions; wherein said source regions are connected to a single common source electrode; wherein said drain regions are connected to a single common drain electrode; wherein said second gate electrodes are connected to a single common gate electrode; and wherein said first gate electrodes are connected to said common source electrode. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39)
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40. A power semiconductor device, comprising:
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a first-conductivity-type source region; a first trench containing a gate electrode which is capacitively coupled to a body region to selectably form a channel region therein; at least one second trench containing a recessed field plate electrode; a body contact region which is more heavily doped than said body region; a plurality of shield regions;
wherein one said shield region is present beneath at least each said second trench;a source metallization layer which is in ohmic contact with said source region and said body contact region, and which is electrically connected to said gate electrode; and a backside metallization layer. - View Dependent Claims (41, 42, 43, 44, 45, 46)
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47. A power semiconductor device, comprising:
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a first and second gated transistor, integrated on a single semiconductor die, both having a first-conductivity-type source region and a gate electrode which is capacitively coupled to a body region to selectably form a channel region therein; wherein the channel region of said first gated transistor has a shorter spatial extent than does the channel region of said second gated transistor. - View Dependent Claims (48, 49, 50)
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51-73. -73. (canceled)
Specification