ORGANIC LIGHT-EMITTING DISPLAY DEVICE

• US 20180138451A1
• Filed: 01/15/2018
• Published: 05/17/2018
• Est. Priority Date: 05/12/2015
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Kim, Yongjin
• Granted Patent: US 10,490,773 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/8731 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Abstract

An organic light-emitting display device includes: a substrate; a driving thin film transistor on the substrate; and a DAM at an outermost portion of the substrate, where the DAM includes an inorganic layer and includes a first metallic DAM. The first metallic DAM may include two or more metal layers spaced apart at a set interval.

Claims

1. An organic light-emitting display device comprising:

a substrate;

a driving thin film transistor on the substrate; and

a DAM at an outermost portion of the substrate,

wherein the DAM comprises an inorganic layer and a first metallic DAM.

2. The device of claim 1, wherein the first metallic DAM comprises two or more metal layers spaced apart at a set interval.

3. The device of claim 2, wherein the first metallic DAM comprises three metal layers spaced apart at a set interval.

4. The device of claim 1, wherein the DAM has a step difference at an upper portion of the inorganic layer and a step difference at a lower portion of the inorganic layer of the first metallic DAM.

5. The device of claim 1, wherein the first metallic DAM is formed on an upper portion of a gate insulating layer;

and

wherein the DAM further comprises a first interlayer insulating layer on an upper portion of the first metallic DAM.

6. The device of claim 5, further comprising:

a storage capacitor comprising a first electrode coupled with a driving gate electrode of the driving thin film transistor, and a second electrode on an upper portion of the first electrode and insulated from the first electrode,

wherein the driving gate electrode and the first electrode are integrally formed in a same layer, and the first metallic DAM is in the layer in which the driving gate electrode and the first electrode are formed.

7. The device of claim 6, wherein the first interlayer insulating layer is between the first electrode and the second electrode and insulates the second electrode from the first electrode.

8. The device of claim 6, further comprising:

a second interlayer insulating layer on the first interlayer insulating layer and having an opening that exposes a portion of the first interlayer insulating layer,

wherein the second electrode is in the opening.

9. The device of claim 5, further comprising:

an organic light-emitting diode on an upper portion of the driving thin film transistor; and

an encapsulation structure on an upper portion of the organic light-emitting diode and sealing the organic light-emitting diode,

wherein the encapsulation structure comprises alternately stacked thin film encapsulation organic layers and thin film encapsulation inorganic layers.

10. The device of claim 9, wherein the DAM further comprises a thin film encapsulation inorganic layer that extends to a portion of the first interlayer insulating layer.

11. The device of claim 1, wherein the DAM comprises a second metallic DAM on an upper portion of the first metallic DAM.

12. The device of claim 11, wherein the second metallic DAM comprises two or more metal layers spaced apart at a set interval.

13. The device of claim 11, wherein the DAM further comprises:

a first interlayer insulating layer formed between the first metallic DAM and the second metallic DAM; and

a second interlayer insulating layer formed on an upper portion of the first interlayer insulating layer and covering the second metallic DAM.

14. The device of claim 11, further comprising:

a storage capacitor comprising a first electrode coupled with a driving gate electrode of the driving thin film transistor, and a second electrode on an upper portion of the first electrode and insulated from the first electrode,

wherein the driving gate electrode and the first electrode are integrally formed in a same layer, the first metallic DAM is in the layer in which the driving gate electrode and the first electrode are formed, and the second metallic DAM is formed in a layer in which the second electrode is formed.

15. The device of claim 14, wherein:

the inorganic layer comprises a first interlayer insulating layer,

the device further comprises a second interlayer insulating layer on the first interlayer insulating layer and having an opening that exposes a portion of the first interlayer insulating layer, and

the second electrode is in the opening.

16. The device of claim 15, further comprising:

an organic light-emitting diode on an upper portion of the driving thin film transistor; and

an encapsulation structure on an upper portion of the organic light-emitting diode, and comprising alternatively stacked thin film encapsulation organic layers and thin film encapsulation inorganic layers, and sealing the organic light-emitting diode,

wherein the DAM further comprises a thin film encapsulation inorganic layer that extends to a portion of the second interlayer insulating layer.

17. The device of claim 11, wherein the DAM further comprises a third metallic DAM on an upper portion of the second metallic DAM.

18. The device of claim 17, wherein the third metallic DAM comprises two or more metal layers spaced apart at a set interval.

19. The device of claim 17, wherein the DAM further comprises:

a first interlayer insulating layer formed between the first metallic DAM and the second metallic DAM;

a second interlayer insulating layer formed on an upper portion of the second metallic DAM; and

a thin film encapsulation inorganic layer that extends up to an upper portion of the third metallic DAM.

20. The device of claim 17, further comprising:

a storage capacitor comprising a first electrode coupled to a driving gate electrode of the driving thin film transistor, and a second electrode on an upper portion of the first electrode and insulated from the first electrode; and

a data line on an upper portion of the second electrode,

wherein the driving gate electrode and the first electrode are integrally formed in a same layer, the first metallic DAM is in the layer in which the driving gate electrode and the first electrode are formed, the second metallic DAM is in a layer in which the second electrode is formed, and the third metallic DAM is in a layer in which the data line is formed.

21. An organic light-emitting display device comprising:

a substrate;

a driving thin film transistor on the substrate; and

a DAM at an outermost portion of the substrate,

wherein the DAM comprises an inorganic layer, a first metallic DAM and a second metallic DAM on an upper portion of the first metallic DAM, and

wherein the inorganic layer comprises a first interlayer insulating layer between the first metallic DAM and the second metallic DAM, a second interlayer insulating layer on the second metallic DAM, and a thin film encapsulation inorganic layer on an upper portion of the second interlayer insulating layer.

22. The device of claim 21, further comprising:

a storage capacitor comprising a first electrode coupled to a driving gate electrode of the driving thin film transistor, and a second electrode on an upper portion of the first electrode and insulated from the first electrode,

wherein the driving gate electrode and the first electrode are integrally formed in a same layer, the first metallic DAM is in the layer in which the driving gate electrode and the first electrode are formed, and the second metallic DAM is in a layer in which the second electrode is formed.