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FIN FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF

  • US 20180144987A1
  • Filed: 11/13/2017
  • Published: 05/24/2018
  • Est. Priority Date: 11/14/2016
  • Status: Active Grant
First Claim
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1. A method for fabricating a fin field-effect transistor (FinFET) structure, comprising:

  • forming a semiconductor substrate and a plurality of fins by etching a base substrate, wherein first trenches and second trenches are formed between adjacent fins, and a width of the first trenches is greater than a width of the second trenches;

    forming a first isolation layer on a surface of the semiconductor substrate exposed by the fins and on side surfaces of the fins, wherein the first isolation layer in the first trench contains an opening;

    performing a first thermal annealing process on the first isolation layer;

    forming a second isolation layer to fill the opening and cover the first isolation layer;

    removing a partial thickness of the first isolation layer and a partial thickness of the second layer to form an isolation structure;

    forming a gate structure across the plurality of fins by covering side and top surfaces of the plurality of fins; and

    forming doped source/drain regions in the fins at two sides of the gate structure.

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