SEMICONDUCTOR DEVICE
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Accused Products
Abstract
In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.
4 Citations
22 Claims
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1. (canceled)
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2. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first gate electrode; forming a gate insulating film over the first gate electrode; forming an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping with the first gate electrode; forming a pair of electrodes in contact with the oxide semiconductor film; and forming a nitride insulating film over the oxide semiconductor film by a plasma CVD method using a source gas containing nitrogen and ammonia, wherein in the step of forming the nitride insulating film, a flow ratio of the nitrogen to the ammonia is greater than or equal to 5 and less than or equal to 50. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film; forming an oxide semiconductor film over the insulating film; forming a pair of electrodes in contact with the oxide semiconductor film; forming a gate insulating film comprising a nitride insulating film over the oxide semiconductor film; and forming a gate electrode over the gate insulating film, wherein the nitride insulating film is formed by a plasma CVD method using a source gas containing nitrogen and ammonia, and wherein in the step of forming the nitride insulating film, a flow ratio of the nitrogen to the ammonia is greater than or equal to 5 and less than or equal to 50. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first gate electrode; forming a gate insulating film comprising a first nitride insulating film over the first gate electrode; forming an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping with the first gate electrode; forming a pair of electrodes electrically connected to the oxide semiconductor film; and forming a second nitride insulating film over the oxide semiconductor film, wherein the first nitride insulating film and the second nitride insulating film are each formed by a plasma CVD method using a source gas containing nitrogen and ammonia, and wherein in each of the step of forming the first nitride insulating film and the step of forming the second nitride insulating film, a flow ratio of the nitrogen to the ammonia is greater than or equal to 5 and less than or equal to 50. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification