MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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Abstract
A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.
13 Citations
17 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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an oxide semiconductor layer comprising a first region, a second region and a third region; a gate electrode layer over the oxide semiconductor layer; and a nitride layer over the oxide semiconductor layer and the gate electrode layer, wherein the nitride layer contains a metal element, wherein the gate electrode layer overlaps the first region, wherein the second region and the third region are in contact with the nitride layer, wherein the second region and the third region contains the metal element, and wherein a resistance of the second region and a resistance of the third region are each lower than a resistance of the first region. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer; forming a gate electrode layer overlapping a first region of the oxide semiconductor layer with a gate insulating film interposed therebetween; forming a nitride layer comprising a metal element over the gate electrode layer so as to be in contact with a second region and a third region of the oxide semiconductor layer; and performing a heat treatment on the nitride layer, wherein after the heat treatment, the second region and the third region contain the metal element, and wherein after the heat treatment, a resistance of the second region and a resistance of the third region are each lower than a resistance of the first region. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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Specification