TYPE IV SEMICONDUCTOR BASED HIGH VOLTAGE LATERALLY STACKED MULTIJUNCTION PHOTOVOLTAIC CELL
First Claim
1. A photovoltaic device comprising:
- a semiconductor on insulator (SOI) substrate;
n-type doped regions extending from an upper surface of the semiconductor layer of the SOI substrate to a buried oxide layer of the SOI substrate in a first plurality of regions in the SOI substrate;
p-type doped regions extending from the upper surface of the semiconductor layer of the SOI layer to a buried oxide layer on the SOI substrate in a second plurality of regions in the SOI substrate, where one of each of the first and second plurality are adjacent to one another to provide a plurality of P-N junctions; and
intrinsic semiconductor between the first and second plurality of regions in the SOI substrate separating adjacent P-N junctions to provide P-I-N cells that are horizontally oriented.
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Accused Products
Abstract
A method of forming a photovoltaic device that includes ion implanting a first conductivity type dopant into first regions of a semiconductor layer of an SOI substrate, wherein the first regions are separated by a first pitch; and ion implanting a second conductivity type dopant into second regions of the semiconductor layer of the SOI substrate. The second regions are separated by a second pitch. Each second conductivity type implanted region of the second regions is in direct contact with first conductivity type implanted region of the first regions to provide a plurality of p-n junctions, and adjacent p-n junctions are separated by an intrinsic portion of the semiconductor layer to provide P-I-N cells that are horizontally oriented.
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Citations
20 Claims
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1. A photovoltaic device comprising:
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a semiconductor on insulator (SOI) substrate; n-type doped regions extending from an upper surface of the semiconductor layer of the SOI substrate to a buried oxide layer of the SOI substrate in a first plurality of regions in the SOI substrate; p-type doped regions extending from the upper surface of the semiconductor layer of the SOI layer to a buried oxide layer on the SOI substrate in a second plurality of regions in the SOI substrate, where one of each of the first and second plurality are adjacent to one another to provide a plurality of P-N junctions; and intrinsic semiconductor between the first and second plurality of regions in the SOI substrate separating adjacent P-N junctions to provide P-I-N cells that are horizontally oriented. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A photovoltaic device comprising:
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a substrate structure including a semiconductor layer atop a dielectric layer; n-type doped regions extending from an upper surface of the semiconductor layer to the dielectric layer in a first plurality of regions in the substrate structure; p-type doped regions extending from the upper surface of the semiconductor layer to the dielectric layer on the substrate in a second plurality of regions in the SOI substrate, where one of each of the first and second plurality are adjacent to one another to provide a plurality of P-N junctions; and intrinsic semiconductor between the first and second plurality of regions in the substrate structure separating adjacent P-N junctions to provide P-I-N cells that are horizontally oriented. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification