METHOD OF MODELING A MASK BY TAKING INTO ACCOUNT OF MASK PATTERN EDGE INTERACTION
First Claim
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1. A method, comprising:
- receiving a mask layout;
applying an interaction-free mask model to the mask layout;
applying an edge interaction model to the mask layout, the edge interaction model describing an influence due to a plurality of combinations of two or more edges interacting with one another;
applying a thin mask model to the mask layout; and
determining a near field based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model.
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Abstract
A mask layout is received. An interaction-free mask model is applied to the mask layout. An edge interaction model is applied to the mask layout. The edge interaction model describes an influence due to a plurality of combinations of two or more edges interacting with one another. A thin mask model is applied to the mask layout. A near field is determined based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model.
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Citations
20 Claims
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1. A method, comprising:
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receiving a mask layout; applying an interaction-free mask model to the mask layout; applying an edge interaction model to the mask layout, the edge interaction model describing an influence due to a plurality of combinations of two or more edges interacting with one another; applying a thin mask model to the mask layout; and determining a near field based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method, comprising:
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receiving a mask layout, the mask layout including one or more non-Manhattan patterns; applying an interaction-free mask model to the received mask layout; generating an edge interaction model with a set of pre-selected mask layout samples, wherein the generating comprises determining an influence exerted to a plurality of pixels of the mask layout samples by a plurality of combinations of two or more edge segments of the one or more non-Manhattan patterns; applying the edge interaction model to the received mask layout; applying a thin mask model to the received mask layout; and determining a near field of the received mask layout based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model. - View Dependent Claims (14, 15, 16, 17)
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18. A method, comprising:
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receiving a mask layout, the mask layout including one or more non-Manhattan patterns; processing the received mask layout; applying an interaction-free mask model to the processed received mask layout; generating an edge interaction model with a set of pre-selected mask layout samples, wherein the generating comprises computing a plurality of kernels that each describe a correction field at an influenced pixel due to an interaction between two or more edge pixels each located on an edge of the one or more non-Manhattan patterns; applying the edge interaction model to the processed received mask layout; applying a thin mask model to the processed received mask layout; determining a near field of the received mask layout based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model; applying an optical model to the near field to obtain an aerial image of the received mask layout on a wafer; and applying a resist model to the aerial image to obtain a final resist image on the wafer. - View Dependent Claims (19, 20)
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Specification