High-Density Semiconductor Device

• US 20180151381A1
• Filed: 05/03/2017
• Published: 05/31/2018
• Est. Priority Date: 11/28/2016
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chou, Lei-Chun, Chen, Chih-Liang, Lai, Chih-Ming, Young, Charles Chew-Yuen, Tseng, Chin-Yuan, Chen, Hsin-Chih, Ju, Shi Ning, Tzeng, Jiann-Tyng, Sio, Kam-Tou, Liu, Ru-Gun, Lin, Wei-Cheng, Lin, Wei-Liang
• Granted Patent: US 10,446,406 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

depositing a first material on a substrate;

depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material;

depositing a spacer material on the first and second materials; and

etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

2. The method of claim 1, further comprising:

forming a mandrel above the substrate;

depositing a second spacer material on a sidewall of the mandrel; and

removing the mandrel, thereby leaving a spacer.

3. The method of claim 2, further comprising forming a third material on a top surface and opposite first and second sidewalls of the spacer.

4. The method of claim 3, further comprising converting the third material on the top surface and the second sidewall of the spacer into a fourth material that has an etch selectivity different from an etch selectivity of the third material.

5. The method of claim 4, wherein converting the third material on the top surface and the second sidewall of the spacer into the fourth material includes implanting ions in the third material on the top surface and the second sidewall of the spacer.

6. The method of claim 4, wherein converting the third material on the top surface and the second sidewall of the spacer into the fourth material includes tilting the semiconductor device at a tilt angle.

7. The method of claim 3, further comprising etching the third material on the first sidewall of the spacer to expose a portion of the first material.

8. The method of claim 7, further comprising:

removing the exposed portion of the first material to expose a portion of the substrate, wherein depositing the second material on the substrate includes depositing the second material on the exposed portion of the substrate; and

etching back the second material to a height of the first material.

9. The method of claim 1, wherein etching the substrate includes forming a plurality of the fins under the first material and a plurality of the fins under the second material such that the fins under the first material and the fins under the second material are alternately arranged along the length of the substrate.

10. The method of claim 1, further comprising fabricating a transistor that includes one of the fins.

11. A method of manufacturing a semiconductor device, the method comprising:

forming above a substrate a spacer that has opposite first and second sidewalls;

depositing a first material on the first and second sidewalls of the spacer;

depositing a spacer material on the first material;

converting the first material on the second sidewall of the spacer into a second material that has an etch selectivity different from an etch selectively of the first material; and

etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

12. The method of claim 11, wherein forming the spacer includes

forming a mandrel above the substrate,

depositing a second spacer material on a sidewall of the mandrel, and

removing the mandrel, thereby leaving the spacer.

13. The method of claim 11, wherein depositing the first material includes

depositing the first material over the substrate and the spacer, and

etching back the first material to a height lower than a height of the spacer.

14. The method of claim 11, wherein converting the first material on the second sidewall of the spacer into the second material includes implanting ions in the first material on the second sidewall of the spacer.

15. The method of claim 11, wherein converting the first material on the second sidewall of the spacer into the second material includes tilting the semiconductor device at a tilt angle.

16. The method of claim 11, wherein etching the substrate includes forming a plurality of the fins under the first material and a plurality of the fins under the second material such that the fins under the first material and the fins under the second material are alternately arranged along the length of the substrate.

17. The method of claim 11, further comprising fabricating a transistor that includes one of the fins.

18. A method comprising:

providing, above a substrate, first and second materials alternately arranged along the length of the substrate; and

etching the substrate to fabricate fins under the first and second materials.

19. The method of claim 18, wherein etching the substrate is such that the fins fabricated under the first materials have a width different from a width of the fins fabricated under the second materials.

20. The method of claim 18, wherein etching the substrate is such that none of the fins under the first materials in a first cell is collinear with the fins under the second materials and in a second cell at the same row as the first cell.