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TRENCH GATE IGBT

  • US 20180151710A1
  • Filed: 05/25/2016
  • Published: 05/31/2018
  • Est. Priority Date: 01/05/2016
  • Status: Active Application
First Claim
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1. A trench gate IGBT, which comprises a semiconductor base and a first structure, whereinthe first structure comprises first trench gate structures and a second trench gate structure which are arranged at a surface interior of the semiconductor base, whereinthe second trench gate structure is arranged between two first trench gate structures;

  • the first trench gate structures are real gates, and the second trench gate structure is a dummy gate; and

    an emitter metal is in contact with the second trench gate structure.

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