TRENCH GATE IGBT
First Claim
1. A trench gate IGBT, which comprises a semiconductor base and a first structure, whereinthe first structure comprises first trench gate structures and a second trench gate structure which are arranged at a surface interior of the semiconductor base, whereinthe second trench gate structure is arranged between two first trench gate structures;
- the first trench gate structures are real gates, and the second trench gate structure is a dummy gate; and
an emitter metal is in contact with the second trench gate structure.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed is a trench gate IGBT. A dummy gate is arranged between two real gates. An emitter metal is in contact with the dummy gate, so that an emitter metal contact area is not limited to an area between trenches. The emitter metal contact area includes an area where the emitter metal is in contact with the dummy gate, thereby enlarging the emitter metal contact area, and accordingly reducing a distance between each of the real gates and the dummy gate. Consequently, the distance between each of the real gates and the dummy gate is no longer affected by a minimum emitter contact area, and a turn-on voltage drop of the trench gate IGBT can be greatly reduced.
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Citations
10 Claims
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1. A trench gate IGBT, which comprises a semiconductor base and a first structure, wherein
the first structure comprises first trench gate structures and a second trench gate structure which are arranged at a surface interior of the semiconductor base, wherein the second trench gate structure is arranged between two first trench gate structures; - the first trench gate structures are real gates, and the second trench gate structure is a dummy gate; and
an emitter metal is in contact with the second trench gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
- the first trench gate structures are real gates, and the second trench gate structure is a dummy gate; and
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8. A trench gate IGBT, which comprises a semiconductor base, a first trench gate structure and second trench gate structures which are arranged within a surface interior of the semiconductor base, wherein
the first trench gate structure is arranged between two second trench gate structures; - the first trench gate structure is a real gate, and the second trench gate structures are dummy gates; and
an emitter metal is in contact with the second trench gate structures. - View Dependent Claims (9, 10)
- the first trench gate structure is a real gate, and the second trench gate structures are dummy gates; and
Specification