MAGNETORESISTIVE ELEMENT AND MEMORY CIRCUIT
First Claim
1. A magnetoresistive element comprising:
- a free layer that includes a magnetostrictive layer containing a magnetostrictive material;
a pin layer that includes a first ferromagnetic layer;
a thin film that is located between the pin layer and the free layer;
a piezoelectric substance that is located so as to surround at least a part of the magnetostrictive layer from a direction intersecting with a stacking direction of the free layer and the pin layer and applies a pressure to the magnetostrictive layer; and
an electrode that is capable of applying a voltage different from a voltage applied to the free layer and a voltage applied to the pin layer and applies a voltage to the piezoelectric substance so that the piezoelectric substance applies a pressure to the magnetostrictive layer.
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Accused Products
Abstract
A magnetoresistive element includes: a free layer that includes a magnetostrictive layer containing a magnetostrictive material; a pin layer that includes a first ferromagnetic layer; a thin film that is located between the pin layer and the free layer; a piezoelectric substance that is located so as to surround at least a part of the magnetostrictive layer from a direction intersecting with a stacking direction of the free layer and the pin layer and applies a pressure to the magnetostrictive layer; and an electrode that is capable of applying a voltage different from a voltage applied to the free layer and a voltage applied to the pin layer and applies a voltage to the piezoelectric substance so that the piezoelectric substance applies a pressure to the magnetostrictive layer.
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Citations
14 Claims
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1. A magnetoresistive element comprising:
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a free layer that includes a magnetostrictive layer containing a magnetostrictive material; a pin layer that includes a first ferromagnetic layer; a thin film that is located between the pin layer and the free layer; a piezoelectric substance that is located so as to surround at least a part of the magnetostrictive layer from a direction intersecting with a stacking direction of the free layer and the pin layer and applies a pressure to the magnetostrictive layer; and an electrode that is capable of applying a voltage different from a voltage applied to the free layer and a voltage applied to the pin layer and applies a voltage to the piezoelectric substance so that the piezoelectric substance applies a pressure to the magnetostrictive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A memory circuit comprising:
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a magnetoresistive element including; a free layer that includes a magnetostrictive layer containing a magnetostrictive material; a pin layer that includes a first ferromagnetic layer; a thin film that is located between the pin layer and the free layer; a piezoelectric substance that is located so as to surround at least a part of the magnetostrictive layer from a direction intersecting with a stacking direction of the free layer and the pin layer, and applies a pressure to the magnetostrictive layer; and an electrode that is capable of applying a voltage different from a voltage applied to the free layer and a voltage applied to the pin layer, and applies a voltage to the piezoelectric substance so that the piezoelectric substance applies a pressure to the magnetostrictive layer; and a transistor including; a source and a drain, one of the source and the drain being coupled to one of the free layer and the pin layer; a channel that is located between the source and the drain and through which a carrier conducts from the source to the drain; and a gate that surrounds at least a part of the channel from the intersecting direction, wherein the source, the channel, and the drain are stacked in the stacking direction. - View Dependent Claims (14)
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Specification