Please download the dossier by clicking on the dossier button x
×

MAGNETORESISTIVE ELEMENT AND MEMORY CIRCUIT

  • US 20180158496A1
  • Filed: 05/31/2016
  • Published: 06/07/2018
  • Est. Priority Date: 06/03/2015
  • Status: Active Grant
First Claim
Patent Images

1. A magnetoresistive element comprising:

  • a free layer that includes a magnetostrictive layer containing a magnetostrictive material;

    a pin layer that includes a first ferromagnetic layer;

    a thin film that is located between the pin layer and the free layer;

    a piezoelectric substance that is located so as to surround at least a part of the magnetostrictive layer from a direction intersecting with a stacking direction of the free layer and the pin layer and applies a pressure to the magnetostrictive layer; and

    an electrode that is capable of applying a voltage different from a voltage applied to the free layer and a voltage applied to the pin layer and applies a voltage to the piezoelectric substance so that the piezoelectric substance applies a pressure to the magnetostrictive layer.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×