Micro Elements Transfer Device and Method

• US 20180158706A1
• Filed: 01/16/2018
• Published: 06/07/2018
• Est. Priority Date: 11/04/2016
• Status: Active Grant

• Current Assignee: Xiamen San'An Optoelectronics Co.Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Inventors: HSU, Chen-ke, ZHUO, Jiali, SHAO, Xiaojuan, ZHENG, Jiansen
• Granted Patent: US 10,410,893 B2
• Time in Patent Office: Days
• CPC Class Codes: G01R 31/2887 involving moving the probe head or the IC under test; docking stations moving single probes G01R1/06705; moving individual probes in multiple probes G01R1/07392
• CPC Class Codes: H01L 21/67288 Monitoring of warpage, curvature, damage, defects or the like
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 2224/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 24/00 Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A transfer device for micro element with a test circuit can test the micro element during transfer. The transfer device for micro elements includes: a base substrate, having two surfaces opposite to each other; a pick-up head array, formed over the first surface of the base substrate for picking up or releasing the micro element; a test circuit set inside or/on the surface of the base substrate, which has a series of sub-test circuits, each sub-test circuit at least having two test electrodes for simultaneous test of photoelectric parameters of the micro element when the transfer device transfers the micro element.

Claims

1. A transfer device of micro element comprising:

a base substrate, having two surfaces opposite to each other;

a pick-up head array, formed over the first surface of the base substrate for picking up or releasing the micro element; and

a test circuit set inside or/on the surface of the base substrate, which has a series of sub-test circuits, each sub-test circuit at least having two test electrodes for simultaneous test of photoelectric parameters of the micro element when the transfer device transfers the micro element.

2. The transfer device of claim 1, wherein:

at least one test electrode of each sub-test circuit is formed over the surface of the pick-up head for contacting with the micro element, and connects to the micro element electrode when the pick-up head array contacts with the micro element.

3. The transfer device of claim 2, wherein:

each sub-test circuit has a pair of test electrodes respectively.

4. The transfer device of claim 2, wherein:

each sub-test circuit shares a test electrode.

5. The transfer device of claim 2, wherein:

the test circuit also comprises a retractable electrode located on the first surface of the base substrate, which forms a sub-test circuit together with the test electrode formed over the surface of the pick-up head for contacting with the micro element.

6. The transfer device of claim 1, wherein:

the transfer device also comprises a CMOS integrated circuit over the second surface of the base substrate, which connects to the test circuit.

7. The transfer device of claim 6, wherein:

the base substrate has a through-hole structure, wherein, the test circuit passes through the through-hole structure and extends to the second surface of the base substrate.

8. The transfer device of claim 6, wherein:

the base substrate is a Si substrate, and the CMOS integrated circuit is formed by a portion of the Si substrate.

9. The transfer device of claim 6, wherein:

the CMOS integrated circuit is a structure layer formed over the base substrate.

10. The transfer device of claim 1, wherein:

the pick-up head array picks up the micro element through electrostatic force, Van der Waals force and vacuum adsorption force.

11. The transfer device of claim 1, wherein:

the pick-up head has a static electrode layer and a dielectric layer cladding on the electrode layer, wherein, when the electrode layer applies absorption voltage, the pick-up head produces static attraction force to pick up the micro element contact therewith.

12. The transfer device of claim 1, wherein:

the surface of each pick-up head of the pick-up head array is made of biomimetic gecko material to absorb the micro element by virtue of absorption capacity of the biomimetic gecko material.

13. The transfer device of claim 1, wherein:

the pick-up head array is a series of suction nozzle arrays, which absorb or release the micro element through vacuum pressure.

14. The transfer device of claim 13, wherein:

the transfer device also comprises a cavity, a plurality of vacuum paths and a switch component, wherein, the suction nozzle array is connected to the cavity via a plurality of the vacuum paths, and valves are set at the connection place for switching on/off, and the switch component is used for controlling on or off of the valve of each vacuum path so that the suction nozzle is controlled to absorb or release required micro element through vacuum pressure.

15. The transfer device of claim 14, wherein:

the switch component comprises a CMOS integrated circuit and an address electrode array connected to the CMOS integrated circuit, wherein, each vacuum path valve corresponds to the address electrode array.

16. The transfer device of claim 15, wherein:

the valve is a movable member, wherein, the address electrode array is under selective excitation by the CMOS integrated circuit with voltage potential to generate electrostatic attraction, through which, corresponding movable member would deflect or approach to corresponding address electrode, thus controlling opening or closing of each vacuum path.

17. The transfer device of claim 14, wherein:

the vacuum path is a series of micro-hole structures passing through the base substrate, wherein, one end is connected to the cavity, and the other is connected to the suction nozzle.

18. A transfer method of a micro element, the method comprising:

(1) providing a transfer device, which comprises a base substrate, a pick-up head array formed over the surface of the base substrate and a test circuit inside or/and on the surface of the base substrate, wherein, the test circuit has a series of sub-test circuits, each sub-test circuit having at least two test electrodes;

(2) positioning the transfer device on the micro element connected to the carrier substrate; and

(3) contacting the test electrode of the transfer device with the micro element electrode to apply test voltage on the test circuit to form a test hoop for testing the micro element and obtaining defect pattern of the micro element of the carrier substrate.

19. The transfer method of claim 18, further comprising:

(4) using the pick-up array of the transfer device to pick up qualified micro elements on the carrier substrate;

(5) releasing micro elements on the acceptor substrate.

20. The transfer method of claim 18, further comprising:

(4) using the pick-up array of the transfer device to pick up unqualified micro elements on the carrier substrate;

(5) releasing unqualified micro elements on the acceptor substrate.