SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, METHOD OF DESIGNING SEMICONDUCTOR APPARATUS, AND ELECTRONIC APPARATUS
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Accused Products
Abstract
A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.
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Citations
20 Claims
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1-13. -13. (canceled)
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14. A method of manufacturing a semiconductor device including the steps of:
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forming a first material layer with a first surface and a second surface; forming a second material layer with a first surface and a second surface; securing the second surface of the first material layer against the first surface of the second material layer; and forming a first via and a second via simultaneously, wherein, along a common cross section parallel to an interface between the two material layers the first via has a cross section larger than that of the second via. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification