MANUFACTURABLE RGB LASER DIODE SOURCE

• US 20180159302A1
• Filed: 11/21/2017
• Published: 06/07/2018
• Est. Priority Date: 02/10/2014
• Status: Active Grant

• Current Assignee: Kyocera SLD Laser Incorporated (Kyocera Corporation)
• Original Assignee: Soraa Laser Diode, Inc. (Kyocera Corporation)
• Inventors: McLaurin, Melvin, Sztein, Alexander, Hsu, Po Shan, Goutain, Eric, Raring, James W., Rudy, Paul, Novotny, Vlad
• Granted Patent: US 10,749,315 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 33/0045 the devices being superluminescent diodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01S 5/0203 Etching
• CPC Class Codes: H01S 5/0216 using an intermediate compound, e.g. a glue or solder
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/2201 in a specific crystallographic orientation
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP
• CPC Class Codes: H01S 5/4025 Array arrangements, e.g. constituted by discrete laser diodes or laser bar H01S5/42 takes precedence
• CPC Class Codes: H01S 5/4093 Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion

Abstract

A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

Claims

1-37. -37. (canceled)

38. An integrated multi-wavelength light emitting device, the device provided from a first substrate having a first surface region and a first epitaxial material overlying the first surface region, the first epitaxial material comprising a release region, an n-type cladding region, a first active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region, the first active region being configured for emission at a first wavelength, and a second substrate having a second surface region and a second epitaxial material overlying the second surface region, the second epitaxial material comprising a release region, an n-type cladding region, a second active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region, the second active region being configured for emission at a second wavelength such that the first epitaxial material and the second epitaxial material are patterned to form a plurality of first epitaxial dice and a plurality of second epitaxial dice overlying the first substrate and the second substrate, respectively, each of the plurality of first epitaxial dice and the plurality of second epitaxial dice corresponding to at least one light emitting device, the device comprising:

at least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice transferred from the first substrate and from the second substrate, respectively, to a carrier wafer by selectively etching a release region, separating from the first substrate and from the second substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred.

39. The device of claim 38 wherein the transferred first epitaxial dice and the transferred second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least the first wavelength and the second wavelength.

40. The device of claim 38, wherein each of the plurality of the epitaxial dice formed on the first substrate and on the second substrate is characterized by a first pitch and a second pitch between each pair of adjacent epitaxial dice, the first pitch and the second pitch being less than a design width;

and wherein each of the transferred epitaxial dice is characterized by a third pitch and a fourth pitch between each pair of adjacent epitaxial dice, the third and fourth pitch being larger than the first pitch and the second pitch, respectively, and corresponding to the design width.

41. The device of claim 40, wherein each of the epitaxial dice is shaped as a mesa, each of the first pitch and the second pitch is between 1 μ

m and 10 μ

m, or between 10 micron and 50 microns, or between 50 μ

m and 100 μ

m, or between 100 μ

m and 500 μ

m with a length of 50 μ

m to 3000 μ

m, and the patterning comprises an etching process.

42. The device of claim 40, wherein each of the third pitch and the fourth pitch is between 50 microns and 200 microns, or between 200 microns and 500 microns, or between 500 microns and 1000 microns, or greater than 1000 microns.

43. The device of claim 38, wherein the carrier wafer is selected from SiC, sapphire, Si, GaN, and GaAs;

44. The device of claim 38, wherein the first substrate and the second substrate are gallium and nitrogen containing materials.

45. The device of claim 38 wherein each of the first wavelength and the second wavelength is in the blue wavelength range to form at least a dual blue wavelength integrated multi-wavelength light emitting device.

46. The device of claim 45 wherein the light emitting device is configured as a laser diode device or a SLED device.

47. The device of claim 38 wherein the first wavelength is selected from a blue wavelength and the second wavelength is selected from a green wavelength to form at least a blue and green light emitting integrated multi-wavelength light emitting device.

48. The device of claim 47 wherein the light emitting device is configured as a laser diode device or a SLED device.

49. The device of claim 38, wherein the first substrate is a gallium and nitrogen containing material and the second substrate is a gallium and arsenic containing material.

50. The device of claim 38, further comprising:

at least one of a plurality of third epitaxial dice from a third substrate transferred to the carrier wafer by selectively etching the release region, separating from the substrate the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer the epitaxial dice that are being transferred.

51. The device of claim 50 wherein the transferred first epitaxial dice, the second epitaxial dice, and the third epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least the first wavelength, the second wavelength, and the third wavelength.

52. The method of claim 51, wherein the first substrate and the second substrate are gallium and nitrogen containing materials and the first wavelength is a blue wavelength and the second wavelength is a green wavelength;

and wherein the third substrate is a gallium and arsenic containing material and the third wavelength is selected from a red wavelength such that the integrated multi-wavelength light emitting device is configured to emit a first blue wavelength, a second green wavelength, and a third red wavelength to form an RGB light emitting device.

53. An integrated multi-wavelength light emitting device, the device comprising:

at least one of a first plurality of epitaxial dice, a second plurality of epitaxial dice, and a third plurality of epitaxial dice transferred, respectively, from the first substrate, the second substrate, and the third substrate to a carrier wafer by selectively etching a release region, separating from each of a first substrate, a second substrate, and a third substrate each of the first epitaxial dice, the second epitaxial dice, and the third epitaxial dice that is being transferred, and selectively bonding to the carrier wafer each of the first epitaxial dice, the second epitaxial dice, and the third epitaxial dice that is being transferred; and

wherein the transferred first epitaxial dice, the second epitaxial dice, and the third epitaxial dice on the carrier wafer are processed to form an RGB emitting devices capable of emitting a red wavelength, a green wavelength, and a blue wavelength.

54. The method of claim 53, wherein the integrated multiple wavelength light emitting device is an RGB laser diode device comprising a red laser diode, a green laser diode, and a blue laser diode.

55. The method of claim 54 wherein the integrated multiple wavelength light emitting device is an RGB SLED device comprising a red SLED, a green SLED, and a blue SLED.

56. The method of claim 55, wherein the optical emission comprising a red wavelength, a green wavelength, and a blue wavelengths emitted from the integrated multiple-wavelength light emitting device is optically coupled to a micro-display such as a MEMS scanning mirror, DLP, or LCOS.

57. An integrated multi-wavelength light emitting device, the device comprising:

a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength provided from processing a transferred first epitaxial dice and a second epitaxial dice on a carrier wafer provided from transferring at least one of a first plurality of epitaxial dice and at least one of a second plurality of epitaxial dice from a first substrate and a second substrate, respectively, to the carrier wafer, whereupon each of the plurality of first epitaxial dice and the plurality of second epitaxial dice correspond to at least one light emitting device.