ETCHING COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME

• US 20180163130A1
• Filed: 11/06/2017
• Published: 06/14/2018
• Est. Priority Date: 12/14/2016
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd., Soulbrain Co., Ltd.
• Original Assignee: Samsung Electronics Co. Ltd., Soulbrain Co., Ltd.
• Inventors: KIM, Soo Jin, LEE, Hyo Sun, BAE, Jin Hye, LIM, Jung Hun, CHOI, Yong Jae
• Granted Patent: US 10,414,978 B2
• Time in Patent Office: Days
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: C09K 13/00 Etching, surface-brightening or pickling compositions for glass C03C15/00, C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338 ; for metallic material C23F, C23G1/00, C25F1/00; for semi-conductors H01L
• CPC Class Codes: C09K 13/08 containing a fluorine compound
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/423 not carrying the current to be rectified, amplified or switched
• CPC Class Codes: H01L 29/42364 characterised by the insulating layer, e.g. thickness or uniformity H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/66 Types of semiconductor device ; Multistep manufacturing processes therefor
• CPC Class Codes: H01L 29/66439 with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor with an active layer made of a group 13/15 material H01L29/66469
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/775 with one dimensional charge carrier gas channel, e.g. quantum wire FET
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).

Claims

1. An etching composition comprising:

a peracetic acid mixture;

a fluorine compound;

an acetate series organic solvent; and

water.

2. The etching composition of claim 1, wherein

the peracetic acid mixture includes an acetic acid solution and a hydrogen peroxide solution mixed together with a volume ratio of 33:

10 to 33;

33,

the acetic acid solution is acetic acid aqueous solution of 100 percent concentration, and

the hydrogen peroxide solution is hydrogen peroxide aqueous solution of 31 percent concentration.

3. The etching composition of claim 1, wherein the peracetic acid mixture includes acetic acid, hydrogen peroxide, and peracetic acid.

4. The etching composition of claim 3, wherein

the peracetic acid mixture includes an aging catalyst, and

the aging catalyst includes at least one of sulfuric acid and methanesulfonic acid.

5. The etching composition of claim 1, wherein the acetate series organic solvent includes at least one of methylacetate, ethylacetate, sodium acetate, isopropyl acetate, n-propyl acetate, butyl acetate, n-butyl acetate, isobutyl acetate, vinyl acetate, pentyl acetate, octyl acetate, amyl acetate, and 2-ethoxyethyl acetate.

6. The etching composition of claim 5, wherein the acetate series organic solvent is included in a range of 15 wt % to 65 wt % with respect to a total weight of the etching composition.

7. The etching composition of claim 1, wherein the fluorine compound includes at least one of HF, NaF, KF, AlF₂, LiF₄, CaF₃, NaHF₆, NH₄F, NH₄HF₂, (CH₃)₄NF, KHF₂, HBF₄, NH₄BF₄, KBF₄, and H₂SiF₆.

8. The etching composition of claim 7, wherein the fluorine compound is included in a range of 0.01 wt % to 5 wt % with respect to a total weight of the etching composition.

9. The etching composition of claim 1, further comprising:

at least one silicon compound, wherein

the at least one silicon compound includes one of an alkoxy silane compound, a silanol compound, an oxime silane compound, an disilazane compound, and a disiloxane compound.

10. The etching composition of claim 9, wherein

the at least one silicon compound includes the alkoxy silane compound, and

the alkoxy silane compound includes one of tert-butylmethoxydimethylsilane, 3-cyanopropyl dimethyl methoxysilane, ethoxy(trimethyl)silane, methoxytrimethylsilane, hexyl(dimethoxy)silane, methyldiethoxysilane, triethoxysilane, 3-aminopropyltriethoxysilane, 4-aminobutyldimethylmethoxysilane, 3-aminopropyldimethylethoxysilane, and 3-(2-aminoethylamino)propyltrimethoxysilane.

11. The etching composition of claim 9, wherein

the at least one silicon compound includes the silanol compound, and

the silanol compound includes one of trimethylsilanol, dimethylsilandiol, diphenylsilanediol, silanetriol, 3-aminopropylsilanetriol, 1-methylsilanetriol, 2-methyl-2-propylsilanetrial, methyltriacetatesilanetriol, 2-(chloroethyl)triacetate silanetriol, and 3-(hydroxypropyl) silanetriol.

12. The etching composition of claim 9, wherein

the at least one silicon compound includes the oxime silane compound, and

the oxime silane compound includes one of di(ethylketoxime)silane, mono(ethylketoxime)silane, tris(ethylketoxime)silane, tetra(ethylketoxime)silane, methyltris(methylethylketoxime)silane, methyltris(acetoxme)silane, methyltris(methylisobutylketoxime)silane, dimethyldi (methyl ethylketoxime)silane, trimethyl(methylethylketoxime)silane, tetra(methylethylketoxime)silane, tetra(methylisobutylketoxime)silane, vinyltris(methylethylketoxime)silane, methylvinyldi(methylethylketoxime)silane, vinyltris(methylethylketoxime)silane, methylvinyldi(methylethylketoxime)silane, methylvinyldi(cyclohexanoneoxime)silane, vinyltris(methylisobutylketoxime)silane), and phenyltris(methylethylketoxime)silane.

13. The etching composition of claim 9, wherein

the at least one silicon compound includes the disilazane compound and the disiloxane compound, the disilazane compound includes hexamethyldisilazane, and the disiloxane compound includes one of hexamethyldisiloxane, octamethylcyclotetrasiloxane, decamethylcyclopentasiloxane, and dodecamethylcyclohexasiloxane.

14. The etching composition of claim 9, wherein the silicon compound is included in a range of 0.01 wt % to 5 wt % with respect to a total weight of the etching composition.

15. An etching composition comprising:

15 wt % to 75 wt % of a peracetic acid mixture, based on a total weight of the etching composition;

0.01 wt % to 5 wt % of a fluorine compound, based on the total weight of the etching composition;

15 wt % to 65 wt % of an organic solvent, based on the total weight of the etching composition; and

water, wherein

a sum of respective amounts of the peracetic acid mixture, the fluorine compound, and the organic solvent are less than the total weight of the etching composition.

16. The etching composition of claim 15, wherein the peracetic acid mixture includes acetic acid, hydrogen peroxide, and peracetic acid.

17. The etching composition of claim 16, wherein the peracetic acid mixture includes an acetic acid solution and a hydrogen peroxide solution mixed together with a volume ratio of 33:

10 to 33;

33, and

the acetic acid solution is acetic acid aqueous solution of 100 percent concentration, and

the hydrogen peroxide solution is hydrogen peroxide aqueous solution of 31 percent concentration.

18. The etching composition of claim 15, wherein the organic solvent includes at least one of methanol, ethanol, isopropanol, acetate, proionic acid, lactic acid, methylacetate, ethylacetate, sodium acetate, isopropyl acetate, n-propyl acetate, butyl acetate, n-butyl acetate, isobutyl acetate, vinyl acetate, pentyl acetate, octyl acetate, amyl acetate, and 2-ethoxyethyl acetate.

19. The etching composition of claim 15, wherein the fluorine compound includes at least one of HF, NaF, KF, AlF₂, LiF₄, CaF₃, NaHF₆, NH₄F, NH₄HF₂, (CH₃)₄NF, KHF₂, HBF₄, NH₄BF₄, KBF₄, and H₂SiF₆.

20. The etching composition of claim 15, further comprising:

at least one silicon compound, wherein

the at least one silicon compound includes one of alkoxy sliane compound, silanol compound, oxime silane compound, disilazane compound, and disiloxane compound, and

the silicon compound is included in a range of 0.01 wt % to 5 wt % with respect to the total weight of the etching composition.

21-25. -25. (canceled)