RESIN COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT USING THE SAME, AND SEMICONDUCTOR DEVICE

• US 20180164683A1
• Filed: 04/20/2016
• Published: 06/14/2018
• Est. Priority Date: 04/24/2015
• Status: Active Grant

• Current Assignee: Toray Industries Incorporated
• Original Assignee: Toray Industries Incorporated
• Inventors: Fujiwara, Takenori, Tanigaki, Yugo
• Granted Patent: US 10,451,969 B2
• Time in Patent Office: Days
• CPC Class Codes: C08F 12/24 Phenols or alcohols
• CPC Class Codes: C08G 73/1071 Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
• CPC Class Codes: C08L 79/04 Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
• CPC Class Codes: C08L 79/08 Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
• CPC Class Codes: G03F 7/0046 with perfluoro compounds, e.g. for dry lithography G03F7/0048 takes precedence
• CPC Class Codes: G03F 7/0233 characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
• CPC Class Codes: G03F 7/0387 Polyamides or polyimides
• CPC Class Codes: G03F 7/039 Macromolecular compounds which are photodegradable, e.g. positive electron resists G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023
• CPC Class Codes: G03F 7/162 Coating on a rotating support, e.g. using a whirler or a spinner
• CPC Class Codes: G03F 7/168 Finishing the coated layer, e.g. drying, baking, soaking
• CPC Class Codes: G03F 7/20 Exposure; Apparatus therefor photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: G03F 7/322 Aqueous alkaline compositions
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01L 21/22 Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers

Abstract

Provided is a resin composition including: (A1) an alkali-soluble resin having a specific structural unit; (A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and (B) a photosensitizer, in which the amount of the resin (A2) is 310 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1).

Claims

1. A resin composition, comprising:

(A1) an alkali-soluble resin having a structural unit represented by general formula (1);

(A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and

(B) a photosensitizer, wherein

an amount of the resin (A2) is 310 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1),

2. The resin composition according to claim 1, wherein the resin (A2) has at least one of a hexafluoro propylene structure and a propylene structure that are shown below

3. The resin composition according to claim 1, wherein the resin (A2) has at least one of a polyethylene oxide structure and a polypropylene oxide structure.

4. The resin composition according to claim 1, further comprising (d) a thermally crosslinkable compound.

5. The resin composition according to claim 1, the resin composition being soluble in a solution having a weight ratio of dimethyl-sulfoxide/monoethanolamine=3/7 after heat-treated at 250°

C. for 1 hour.

6. A photoresist, comprising the resin composition according to claim 1.

7. A method for manufacturing a semiconductor element, the method comprising the steps of:

(1) forming a pattern of the resin composition according to claim 1 on a substrate;

(2) performing, at 150°

C. or higher, at least one step selected from the group consisting of (a) doping the substrate with impurity ions, (b) etching the substrate, and (c) dry-forming a film on the substrate; and

(3) peeling off the pattern.

8. The method for manufacturing a semiconductor element according to claim 7, wherein

the step (a) is

(a-1) a step of implanting ions into the substrate, or

(a-2) a step of exposing, to a dopant, the substrate having the patterned resin film formed thereon.

9. The method for manufacturing a semiconductor element according to claim 7, wherein

the step (b) is

(b-1) a step of patterning the substrate by dry etching, or

(b-2) a step of patterning the substrate by wet etching.

10. The method for manufacturing a semiconductor element according to claim 7, wherein the step (c) is a step of dry-forming a metal film on the substrate.

11. The method for manufacturing a semiconductor element according to claim 7, wherein the substrate includes at least one selected from the group consisting of silicon, silicon dioxide (SiO₂), silicon nitride (Si₃N₄), silicon carbide (SiC), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), aluminum gallium arsenide (GaAlAs), gallium indium nitrogen arsenic (GaInNAs), indium nitride (InN), indium phosphide (InP), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium arsenide (InGaAs), indium gallium aluminum phosphide (InGaAlP), indium gallium zinc oxide (IGZO), diamond, sapphire (Al₂O₃), aluminum zinc oxide (AZO), aluminum nitride (AlN), zinc oxide (ZnO), zinc selenide (ZnSe), cadmium sulfide (CdS), cadmium telluride (CdTe), aluminum (Al), and gold (Au).

12. A semiconductor device, comprising a semiconductor element obtained by the method according to claim 7.