Target Optimization Method For Improving Lithography Printability

• US 20180165397A1
• Filed: 12/14/2016
• Published: 06/14/2018
• Est. Priority Date: 12/14/2016
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chang, Shih-Ming, Hsieh, Ken-Hsien, Chou, Shuo-Yen, Liu, Ru-Gun
• Granted Patent: US 10,083,270 B2
• Time in Patent Office: Days
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

Target optimization methods are disclosed herein for enhancing lithography printability. An exemplary method includes receiving an IC design layout for a target pattern, wherein the target pattern has a corresponding target contour; modifying the target pattern, wherein the modified target pattern has a corresponding modified target contour; and generating an optimized target pattern when the modified target contour achieves functionality of the target pattern as defined by a constraint layer. The method can further include defining a cost function based on the constraint layer, where the cost function correlates a spatial relationship between a contour of the target pattern and the constraint layer.

Claims

1. A method comprising:

receiving an IC design layout for a target pattern given ideal processing conditions, wherein the target pattern includes a target feature having a target contour;

modifying the target contour of the target feature to compensate for processing conditions that cause a fabricated pattern to vary from the target pattern;

generating an optimized target pattern when the modified target contour of the target feature achieves functionality of the target pattern as defined by a constraint layer, wherein the constraint layer defines a portion of the target pattern that constrains the modified contour of the target feature; and

fabricating a mask based on the optimized target pattern.

2. The method of claim 1, further comprising defining a cost function based on the constraint layer, wherein the cost function correlates a spatial relationship between a contour of the target feature and the constraint layer.

3. The method of claim 2, wherein the optimized target pattern is generated when the modified target contour of the target feature minimizes the cost function.

4. The method of claim 2, wherein a penalty cost of the cost function increases as a position of the modified target contour of the target feature approaches a boundary of the constraint layer.

5. The method of claim 2, wherein the cost function is further based on a defocus, an energy bias, and a mask bias associated with the modified target contour of the target feature.

6. The method of claim 1, wherein the constraint layer includes a forbidden region of the target pattern, wherein the forbidden region defines a portion of the target pattern that cannot be touched by the modified target contour of the target feature.

7. The method of claim 1, wherein the constraint layer includes a landing region of the target pattern, wherein the landing region defines a portion of the target pattern that must be covered by the modified target contour of the target feature.

8. The method of claim 1, wherein the constraint layer includes a functional segment of the target contour, wherein the functional segment contributes to functionality of the target pattern, and further wherein the modified target contour of the target feature fits the target contour at the functional segment when the optimized target pattern is generated.

9. The method of claim 1, wherein the target pattern includes a cut pattern and an IC feature, the target feature is a cut feature, and the constraint layer defines a portion of the IC feature that constrains the modified target contour of the cut feature.

10. The method of claim 1, further comprising fabricating a wafer using the mask and processing parameters associated with minimizing a cost function that is defined based on the constraint layer.

11. A method comprising:

receiving an IC design layout for a target pattern given ideal processing conditions;

defining a constraint layer based on a functionality of the target pattern, wherein the constraint layer defines a portion of the target pattern that constrains a contour of a target feature of the target pattern when modified to compensate for processing conditions that cause a fabricated pattern to vary from the target pattern;

defining a cost function that correlates a spatial relationship between the contour of the target feature and the constraint layer;

modifying a target contour of the target feature using the constraint layer and the cost function;

generating an optimized target pattern when the modified target contour of the target feature minimizes the cost function; and

fabricating a mask based on the optimized target pattern.

12. The method of claim 11, wherein the target pattern defines a first pattern layer and a second pattern layer for forming an IC feature defined by the IC design layout, the target feature is a portion of the second pattern layer, and the constraint layer defines a portion of the first pattern layer that constrains the target feature.

13. The method of claim 11, further comprising simulating a lithography process to simulate the fabricated pattern, wherein the lithography processes uses a mask including the target feature having the modified target contour.

14. The method of claim 11, wherein:

defining the constraint layer includes defining a forbidden region of the target pattern, wherein the forbidden region defines a portion of the target pattern that cannot be touched by the contour of the target feature; and

defining the cost function includes correlating a spatial relationship between the contour of the target feature and the forbidden region, wherein a penalty cost of the cost function increases as a position of the modified target contour approaches a boundary of the forbidden region.

15. The method of claim 11, wherein:

defining the constraint layer includes defining a landing region of the target pattern, wherein the landing region defines a portion of the target pattern to be covered by the contour of the target feature; and

defining the cost function includes correlating a spatial relationship between the contour of the target feature and the landing region, wherein a penalty cost of the cost function increases as a position of the modified target contour approaches a boundary of the landing region.

16. The method of claim 11, wherein:

defining the constraint layer includes defining a functional segment of the target contour of the target feature, wherein the functional segment contributes to functionality of the target pattern; and

generating the optimized target pattern includes fitting the modified target contour of the target feature to the target contour of the target feature at the functional segment.

17. A method comprising:

defining a constraint layer for a first pattern layer that corresponds with a target pattern defined by an integrated circuit (IC) layout, wherein the constraint layer constrains a contour of a target feature of the first pattern layer based on a second pattern layer that corresponds with the target pattern;

iteratively modifying a contour of the target feature until a simulated fabricated pattern functions substantially similar to the target pattern, thereby generating an optimized first pattern layer that includes the target feature having the modified target contour; and

generating a mask based on the optimized first pattern layer.

18. The method of claim 17, further comprising defining a cost function based on the constraint layer, wherein the cost function correlates a spatial relationship between a contour of the target feature and a target feature of the second pattern layer.

19. The method of claim 17, wherein the constraint layer includes a forbidden region of the second pattern layer, the forbidden region defining a portion of the second pattern layer that cannot be touched by the contour of the target feature.

20. The method of claim 17, wherein at each iteration, a lithography process is simulated using a mask that includes the target feature having a respective modified contour to generate the simulated fabricated pattern.