CREATING ION ENERGY DISTRIBUTION FUNCTIONS (IEDF)
First Claim
1. A method, comprising:
- applying a negative jump voltage to an electrode of a process chamber to set a wafer voltage for a wafer; and
modulating an amplitude of the wafer voltage to produce a predetermined number of pulses, wherein a relative number of pulses at a specific amplitude determines a relative ion fraction at an ion energy corresponding to the specific amplitude.
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Accused Products
Abstract
Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.
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Citations
20 Claims
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1. A method, comprising:
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applying a negative jump voltage to an electrode of a process chamber to set a wafer voltage for a wafer; and modulating an amplitude of the wafer voltage to produce a predetermined number of pulses, wherein a relative number of pulses at a specific amplitude determines a relative ion fraction at an ion energy corresponding to the specific amplitude. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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applying a positive jump voltage to an electrode of a process chamber to neutralize a surface of a wafer; applying a negative jump voltage to the electrode to set a wafer voltage for the wafer; and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer. - View Dependent Claims (12, 13, 14, 15)
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16. A method comprising:
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applying a positive jump voltage to an electrode of a process chamber to neutralize a surface of a wafer; applying a negative jump voltage to the electrode to set a wafer voltage for the wafer; and applying a ramp voltage to the electrode that undercompensates for ion current on the wafer. - View Dependent Claims (17, 18, 19, 20)
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Specification