METHOD OF SELECTIVELY ETCHING FIRST REGION MADE OF SILICON NITRIDE AGAINST SECOND REGION MADE OF SILICON OXIDE
First Claim
1. A method of etching a first region made of silicon nitride selectively against a second region made of silicon oxide, comprising:
- preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus;
generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and
generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.
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Accused Products
Abstract
Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.
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Citations
16 Claims
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1. A method of etching a first region made of silicon nitride selectively against a second region made of silicon oxide, comprising:
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preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification