BACKSIDE ILLUMINATED IMAGE SENSOR DEVICE STRUCTURE

• US 20180166475A1
• Filed: 01/10/2017
• Published: 06/14/2018
• Est. Priority Date: 12/14/2016
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: CHEN, Chia-Chan, LEE, Yueh-Chuan, LI, Chih-Huang, CHEN, Ta-Hsin
• Granted Patent: US 10,163,952 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

A method for forming a backside illuminated (BSI) image sensor device structure is provided. The BSI image sensor includes a first substrate having a top surface and a bottom surface, and a plurality of pixel regions formed at the top surface of the first substrate. The BSI image sensor also includes a grid structure through the first substrate and between two adjacent pixel regions. The grid structure extends continuously through the first substrate in a vertical direction and has a top surface and a bottom surface, the top surface of the grid structure protrudes above the bottom surface of the first substrate, and the bottom surface is leveled with the top surface of the first substrate.

Claims

1. A backside illuminated image sensor device structure, comprising:

a first substrate having a top surface and a bottom surface;

a plurality of pixel regions formed at the top surface of the first substrate;

a grid structure through the first substrate and between two adjacent pixel regions of the plurality of pixel regions, wherein the grid structure extends continuously through the first substrate in a vertical direction and has a front surface and a bottom surface, the front surface of the grid structure protrudes above the bottom surface of the first substrate, and the bottom surface of the grid structure is leveled with the top surface of the first substrate;

a doped liner surrounding a portion of the grid structure; and

a passivation layer formed on another portion of the grid structure, wherein the passivation layer is directly over the doped liner.

2. The backside illuminated image sensor device structure as claimed in claim 1,

wherein each respective pixel region of the plurality of pixel regions is doped with a first conductivity type, and the doped liner is doped with a second conductivity type that is different from the first conductivity type.

3. The backside illuminated image sensor device structure as claimed in claim 1, wherein a portion of the grid structure protrudes above the bottom surface of the first substrate to form a protruding portion, and adjacent protruding portions of the grid structure defines a recess between the adjacent protruding portions of the grid structure, and a color filter layer is formed in the recess, wherein a top surface of the color filter layer is substantially level with a top surface of the passivation layer.

4. The backside illuminated image sensor device structure as claimed in claim 3,

wherein the passivation layer is between the color filter layer and the grid structure.

5. The backside illuminated image sensor device structure as claimed in claim 1, wherein the grid structure is tapered from the bottom surface of the grid structure which is level with the top surface of the first substrate to the top surface of the grid structure.

6. The backside illuminated image sensor device structure as claimed in claim 1, further comprising:

a transistor device formed over the top surface of the first substrate; and

an interconnect structure formed over the transistor device.

7. The backside illuminated image sensor device structure as claimed in claim 1, further comprising:

a second substrate formed on the bottom surface of the first substrate; and

a through-silicon via (TSV) structure through the second substrate.

8. The backside illuminated image sensor device structure as claimed in claim 1, wherein the first substrate has a deep trench through the first substrate, and the grid structure is formed in the deep trench.

9. A backside illuminated image sensor device structure, comprising:

a first wafer having a top surface and a bottom surface;

a transistor device formed on the top surface of the first wafer;

an isolation structure formed through the first wafer and above the bottom surface of the first wafer, wherein the isolation structure has a buried portion and a protruding portion, and the protruding portion of the isolation structure is above the bottom surface of the first wafer;

a passivation layer formed on the protruding portion of the isolation structure;

a recess formed adjacent to the protruding portion of the isolation structure; and

a color filter layer filling the recess, wherein a top surface of the color filter layer is substantially level with a top surface of the passivation layer.

10. The backside illuminated image sensor device structure as claimed in claim 9, further comprising:

a pixel region formed in the first wafer; and

a doped liner surrounding the buried portion of the isolation structure, wherein the pixel region is doped with a first conductivity type, and the doped liner is doped with a second conductivity type that is different from the first conductivity type, and wherein the passivation layer is directly over the doped liner.

11. The backside illuminated image sensor device structure as claimed in claim 9, wherein the isolation structure is tapered from the buried portion of the isolation structure to the protruding portion of the isolation structure.

12. The backside illuminated image sensor device structure as claimed in claim 9, further comprising:

an interconnect structure formed over the transistor device, wherein the interconnect structure comprises a conductive feature in a dielectric layer.

13. The backside illuminated image sensor device structure as claimed in claim 12, further comprising:

a second wafer formed over the top surface of the first wafer, wherein the second wafer is bonded to the first wafer by bonding the dielectric layer of the interconnect structure and the second wafer.

14. The backside illuminated image sensor device structure as claimed in claim 13, further comprising:

a through-silicon via (TSV) structure in the second wafer, wherein the TSV structure is electrically connected to the conductive feature of the interconnect structure.

15. A method for forming a backside illuminated image sensor device structure, comprising:

forming a grid structure in a first substrate;

forming a transistor device over the grid structure;

forming an interconnect structure over the transistor device;

forming a second substrate over the interconnect structure, wherein the interconnect structure is between the first substrate and the second substrate;

removing a portion of the first substrate from a bottom surface of the first substrate to form an etched surface on the first substrate, such that the grid structure protrudes above the etched surface of the first substrate and defines a recess adjacent to the grid structure; and

forming a color filter layer in the recess.

16. The method for forming the backside illuminated image sensor device structure as claimed in claim 15, further comprising:

forming a contact structure over the transistor device,

wherein the contact structure is electrically connected to the interconnect structure.

17. The method for forming the backside illuminated image sensor device structure as claimed in claim 15, wherein forming the grid structure in the first substrate comprises:

forming a trench in the first substrate;

forming a doped liner surrounding the trench; and

forming a first fill material and a second fill material in the trench to form the grid structure.

18. The method for forming the backside illuminated image sensor device structure as claimed in claim 17, further comprising:

forming a passivation layer on the etched surface of the first substrate and the grid structure, wherein the passivation layer is formed between the grid structure and color filter layer, and the passivation layer is directly over the doped liner.

20. The method for forming the backside illuminated image sensor device structure as claimed in claim 15, further comprising:

forming a through-silicon via (TSV) structure in the second substrate, wherein the transistor device is electrically connected to the TSV structure.

21. The method for forming the backside illuminated image sensor device structure as claimed in claim 18, wherein a top surface of the color filter layer is substantially level with a top surface of the passivation layer.

19. (canceled)