MEMORY DEVICE AND METHODS FOR CONTROLLING A MEMORY ASSIST FUNCTION
First Claim
1. A memory device comprising:
- a memory array comprising a plurality of memory cells wherein each memory cell is coupled to a control line;
An memory assist circuit configured to, when activated, apply a reduction of a voltage of the control line;
a signal generator configured to generate a first signal representing at least one of a process corner of the memory device, a supply voltage of the memory device, a temperature of the memory device and an aging of the memory device;
a signal processing circuit configured to amplify the first signal; and
a controller configured to activate the memory assist circuit based the amplified first signal.
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Accused Products
Abstract
According to one embodiment, a memory device is described including a memory array including a plurality of memory cells wherein each memory cell is coupled to a control line, a memory assist circuit configured to, when activated, apply a reduction of a voltage of the control line, a signal generator configured to generate a signal representing at least one of a process corner of the memory device, a supply voltage of the memory device, a temperature of the memory device and an aging of the memory device, a signal processing circuit configured to amplify the signal and a controller configured to activate the memory assist circuit based the amplified signal.
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Citations
18 Claims
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1. A memory device comprising:
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a memory array comprising a plurality of memory cells wherein each memory cell is coupled to a control line; An memory assist circuit configured to, when activated, apply a reduction of a voltage of the control line; a signal generator configured to generate a first signal representing at least one of a process corner of the memory device, a supply voltage of the memory device, a temperature of the memory device and an aging of the memory device; a signal processing circuit configured to amplify the first signal; and a controller configured to activate the memory assist circuit based the amplified first signal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for controlling a memory assist function comprising:
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generating a signal representing at least one of a process corner of a memory device, a supply voltage of the memory device, a temperature of the memory device and an aging of the memory device; amplifying the signal; and applying a reduction of a voltage of a control line to which each of a plurality of memory cells of a memory array of the memory device is coupled based the amplified signal.
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Specification