DESIGNER ATOMIC LAYER ETCHING

• US 20180174860A1
• Filed: 12/13/2017
• Published: 06/21/2018
• Est. Priority Date: 12/19/2016
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Kanarik, Keren Jacobs
• Granted Patent: US 10,566,212 B2
• Time in Patent Office: Days
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 2237/3341 Reactive etching
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/30621 Vapour phase etching
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/32138 pre- or post-treatments, e.g. anti-corrosion processes
• CPC Class Codes: H01L 21/67063 for etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/67259 Position monitoring, e.g. misposition detection or presence detection
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

Methods for evaluating synergy of modification and removal operations for a wide variety of materials to determine process conditions for self-limiting etching by atomic layer etching are provided herein. Methods include determining the surface binding energy of the material, selecting a modification gas for the material where process conditions for modifying a surface of the material generate energy less than the modification energy and greater than the desorption energy, selecting a removal gas where process conditions for removing the modified surface generate energy greater than the desorption energy to remove the modified surface but less than the surface binding energy of the material to prevent sputtering, and calculating synergy to maximize the process window for atomic layer etching.

Claims

1. A method of etching a material on a substrate, the method comprising:

identifying process conditions for an atomic layer etching process of the material using a modification gas and a removal gas; and

performing the atomic layer etching process on the material on the substrate by;

exposing the substrate to the modification gas to modify a surface of the material, the modification gas having a modification energy and a desorption energy with respect to the material to be etched, and

exposing the modified surface to the removal gas and igniting a plasma to remove the modified surface,

wherein the modification energy is less than the desorption energy, and the desorption energy is less than a surface binding energy of the material.

2. The method of claim 1, wherein identifying the process conditions comprises selecting a substrate temperature for performing the exposing the substrate to the modification gas, wherein the energy provided by the substrate temperature is between the modification energy and the desorption energy.

3. The method of claim 1, wherein identifying the process conditions comprises selecting a bias power for applying a bias during the exposing the modified surface to the removal gas, wherein the energy provided by the bias is between the desorption energy and the surface binding energy.

4. The method of claim 1, wherein the modification gas is selected to adsorb to the material without etching the material.

5. The method of claim 1, wherein the removal gas is selected to remove the modified surface without etching underlying unmodified material.

6. The method of claim 1, wherein the process conditions are selected from the group consisting of temperature, chamber pressure, plasma power, bias power, modification gas flow, and exposure time.

7. The method of claim 1, further comprising modifying the process conditions within a process window.

8. The method of claim 1, wherein the material is selected from the group consisting of silicon, carbon, niobium, molybdenum, ruthenium, rhodium, rhenium, osmium, tungsten, and tantalum.

9. The method of claim 1, wherein the modification gas is a halogen-containing gas.

10. The method of claim 1, wherein the removal gas is an inert gas.

11. The method of claim 1, wherein atomic layer etching further comprises purging a chamber housing the substrate between the exposing the substrate to the modification gas and the exposing the substrate to the removal gas.

12. The method of claim 8, further comprising cooling the substrate to a temperature less than about 0°

C. prior to performing the atomic layer etching process, wherein the process condition identified is temperature, and wherein the material is tantalum.

13. The method of claim 12, wherein the substrate is exposed to the modification gas at a substrate temperature less than about 0°

C.

14. The method of claim 12, wherein the temperature is between about −

20°

C. and about 0°

C.

15. The method of claim 12, wherein the substrate comprises tantalum nitride.

22. The method of claim 1, wherein the material has a surface binding energy greater than about 6 eV.

16. A method of etching tantalum on a substrate, the method comprising:

providing the substrate comprising tantalum;

cooling the substrate to a temperature less than about 0°

C.; and

performing atomic layer etching of the tantalum by;

exposing the substrate to a modification gas to modify a surface of the tantalum, and

exposing the modified surface to a removal gas and igniting a plasma to remove the modified surface of the tantalum.

17. The method of claim 16, wherein the substrate is exposed to the modification gas at a substrate temperature less than about 0°

C.

18. The method of claim 16, wherein the temperature is between about −

20°

C. and about 0°

C.

19. The method of claim 16, wherein the substrate comprises tantalum nitride.

20. An apparatus for processing a substrate, the apparatus comprising:

a process chamber comprising a showerhead and a substrate support for holding the substrate having a material,

a plasma generator, and

a controller having at least one processor and a memory,

wherein the at least one processor and the memory are communicatively connected with one another,

the at least one processor is at least operatively connected with flow-control hardware, and

the memory stores machine-readable instructions for;

causing identification of process conditions for an atomic layer etching process of the material using a modification gas and a removal gas; and

causing performance of the atomic layer etching process on the material on the substrate by;

causing introduction of a modification gas to modify a surface of the material, the modification gas having a modification energy and a desorption energy with respect to the material to be etched, and

causing introduction of the removal gas and generation of a plasma to remove the modified surface,

wherein the modification energy is less than the desorption energy, and the desorption energy is less than a surface binding energy of the material.

21. An apparatus for processing a substrate, the apparatus comprising:

a process chamber comprising a showerhead and a substrate support for holding the substrate,

a plasma generator, and

a controller having at least one processor and a memory,

wherein the at least one processor and the memory are communicatively connected with one another,

the at least one processor is at least operatively connected with flow-control hardware, and

the memory stores machine-readable instructions for;

causing the temperature of the substrate support having the substrate comprising tantalum to be set to a temperature less than about 0°

C.; and

causing performance of atomic layer etching of the tantalum by;

causing introduction of a modification gas to modify a surface of the tantalum, and

causing the introduction of a removal gas and generation of a plasma to remove the modified tantalum.