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TRANSIENT-VOLTAGE-SUPPRESSION (TVS) DIODE DEVICE AND METHOD OF FABRICATING THE SAME

  • US 20180175018A1
  • Filed: 05/02/2017
  • Published: 06/21/2018
  • Est. Priority Date: 12/21/2016
  • Status: Active Grant
First Claim
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1. A transient-voltage-suppression (TVS) diode device, comprising:

  • a substrate having a first conductivity type;

    a second conductivity type first epitaxial layer disposed over the substrate, wherein the second conductivity type first epitaxial layer has a second conductivity type that is different from the first conductivity type;

    a second conductivity type second epitaxial layer disposed between the second conductivity type first epitaxial layer and the substrate, wherein the second conductivity type second epitaxial layer has the second conductivity type; and

    a plurality of trench isolation features formed extending into the substrate from a top surface of the second conductivity type first epitaxial layer and passing through a bottom surface of the second conductivity type second epitaxial layer, wherein the plurality of trench isolation features close to each other divide the substrate into a first active region;

    wherein the first active region comprises;

    a second conductivity type doped well region disposed in the second conductivity type first epitaxial layer, having the second conductivity type;

    a first conductivity type doped well region disposed in the second conductivity type second epitaxial layer, having the first conductivity type; and

    a first conductivity type buried layer disposed in the second conductivity type second epitaxial layer;

    wherein the second conductivity type doped well region and the first conductivity type buried layer collectively form a Zener diode.

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