SEMICONDUCTOR MEMORY DEVICE

• US 20180175055A1
• Filed: 02/12/2018
• Published: 06/21/2018
• Est. Priority Date: 09/08/2014
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Inventors: MINAMI, Toshifumi, SATO, Atsuhiro, YONEHAMA, Keisuke, BABA, Yasuyuki, SHINOHARA, Hiroshi, KAMATA, Hideyuki, HIGASHITSUJI, Teppei
• Granted Patent: US 10,461,093 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 29/7926 Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
• CPC Class Codes: H10B 41/20 characterised by three-dimensional arrangements, e.g. with cells on different height levels
• CPC Class Codes: H10B 41/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 43/00 EEPROM devices comprising charge-trapping gate insulators
• CPC Class Codes: H10B 43/10 characterised by the top-view layout
• CPC Class Codes: H10B 43/20 characterised by three-dimensional arrangements, e.g. with cells on different height levels
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 43/35 with cell select transistors, e.g. NAND

Abstract

A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.

Claims

1. A semiconductor memory device comprising:

a conducting layer and an insulating layer that are disposed above a semiconductor substrate;

a plurality of pillars that extend in a first direction which crosses a surface of the semiconductor substrate; and

a plate that is disposed between the plurality of pillars and extends in the first direction,

wherein a surface of the plate, which faces the pillars, has convex portions and non-convex portions.