TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS

• US 20180175146A1
• Filed: 02/20/2018
• Published: 06/21/2018
• Est. Priority Date: 02/23/2015
• Status: Active Grant

• Current Assignee: Polar Semiconductor, LLC (Sanken Electric Co., Ltd.), Sanken Electric Company Limited
• Original Assignee: Polar Semiconductor, LLC (Sanken Electric Co., Ltd.), Sanken Electric Company Limited
• Inventors: Dosev, Dosi, Rankila, Don, Kamimura, Tatsuya, Fukunaga, Shunsuke, Kosier, Steven, West, Peter
• Granted Patent: US 10,580,861 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402

Abstract

A trench semiconductor device includes a layer of semiconductor material, an exterior trench pattern formed in the layer of semiconductor material, and an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern. The exterior trench pattern includes a plurality of exterior trench portions that are each lined with dielectric material and filled with conductive material, and the interior trench pattern includes a plurality of interior trench portions that are each lined with dielectric material and filled with conductive material.

Claims

1. A trench semiconductor device comprising:

a layer of semiconductor material;

an exterior trench pattern formed in the layer of semiconductor material, the exterior trench pattern including first and second parallel exterior trench portions that form first and third opposite sides of a rectangle shape, and third and fourth parallel exterior trench portions connected to and perpendicular to the first and second parallel exterior trench portions that form second and fourth opposite sides of the rectangle shape, each of the first, second, third and fourth exterior trench portions being lined with dielectric material and filled with conductive material; and

an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern, the interior trench pattern including a plurality of interior trench portions that are each lined with dielectric material and filled with conductive material, the plurality of interior trench portions being arranged parallel to one another and parallel to the third and fourth parallel exterior trench portions that form the second and fourth opposite sides of the rectangle shape.

2. The trench semiconductor device of claim 1, wherein:

the first and second parallel exterior trench portions that form the first and third opposite sides of a rectangle shape form long sides of the rectangle shape; and

the third and fourth parallel exterior trench portions that form the second and fourth opposite sides of the rectangle shape form short sides of the rectangle shape.

3. The trench semiconductor device of claim 1, further comprising a dividing trench portion that is parallel to the third and fourth exterior trench portions, and extends between and connects the first and second parallel exterior trench portions.

4. The trench semiconductor device of claim 3, wherein the dividing trench portion is located halfway between the third exterior trench portion and the fourth exterior trench portion.

5. The trench semiconductor device of claim 2, further comprising a dividing trench portion that is parallel to the third and fourth exterior trench portions, and extends between and connects the first and second parallel exterior trench portions.

6. The trench semiconductor device of claim 5, wherein the dividing trench portion is located halfway between the third exterior trench portion and the fourth exterior trench portion.

7. The trench semiconductor device of claim 1, wherein the plurality of interior trench portions are separated from one another by an interior gap distance of about 2.0 μ

m.

8. The trench semiconductor device of claim 1, wherein the plurality of interior trench portions have a first trench width, and the first, second, third and fourth exterior trench portions have a second trench width, wherein the second trench width is greater than the first trench width.

9. The trench semiconductor device of claim 8, wherein the second trench width is twice the first trench width.

10. The trench semiconductor device of claim 1, wherein the plurality of interior trench portions have a first trench width that is about 1.4 μ

m.

11. The trench semiconductor device of claim 1, wherein the plurality of interior trench portions are separated from the first, second, third and fourth exterior trench portions of the exterior trench pattern by about 2.0 μ

m.