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METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MULTI SPACERS

  • US 20180175162A1
  • Filed: 02/14/2018
  • Published: 06/21/2018
  • Est. Priority Date: 09/18/2015
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor structure, comprising:

  • forming a fin structure over a substrate;

    forming a gate structure across the fin structure;

    forming a bottom spacer over a lower part of a sidewall of the gate structure;

    forming a dummy spacer layer over an upper part of the sidewall of the gate structure;

    removing at least a portion of the dummy spacer layer to form a gap exposing the upper part of the sidewall of the gate structure; and

    forming an upper spacer in the gap.

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