METHOD OF MANUFACTURING OXIDE THIN FILM TRANSISTOR

• US 20180175178A1
• Filed: 02/13/2018
• Published: 06/21/2018
• Est. Priority Date: 01/19/2015
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: JO, Jung Yun, BAE, Su Bin, SEO, Ki Seong
• Application Number:
  US15/895,464
• Publication Number:
  US 20180175178A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/47635 After-treatment of these layers
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

There is provided a method of manufacturing an oxide thin film transistor (TFT). The method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere, secondly plasma processing the substrate at a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate.

Claims

1. A method of manufacturing an oxide thin film transistor (TFT), the method comprising:

forming a gate electrode on a substrate;

forming a gate insulating layer on the gate electrode;

forming an oxide semiconductor layer including a channel layer on the gate insulating layer;

forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer;

first plasma processing the substrate on which the source electrode and the drain electrode are formed at a nitrogen oxide atmosphere;

secondly plasma processing the substrate at a carbon (C) atmosphere; and

sequentially forming a first protective layer and a second protective layer on the substrate.

2. The method of claim 1, wherein the oxide semiconductor layer is formed of one selected from the group consisting of indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), indium oxide (InO), gallium oxide (GaO), tin oxide (SnO₂), indium-gallium oxide (IGO), indium-zinc oxide (IZO), zinc-tin oxide (ZTO), and indium-zinc-tin oxide (IZTO).

3. The method of claim 1, wherein the first protective layer comprises silicon oxide and the second protective layer comprises silicon nitride.

4. The method of claim 1, wherein the source electrode and the drain electrode comprise a copper (Cu) based conductive material formed of one or more layers.

5. The method of claim 1, wherein the first plasma processing and the second plasma processing are performed in the same chamber.