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HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS

  • US 20180175202A1
  • Filed: 02/07/2018
  • Published: 06/21/2018
  • Est. Priority Date: 07/29/2015
  • Status: Active Application
First Claim
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1. A semiconductor device, comprising:

  • a gate arranged on a substrate;

    a pair of epitaxial contacts comprising a III-V material arranged on opposing sides of the gate; and

    a channel region arranged underneath the gate and between the pair of epitaxial contacts, the channel region comprising a discrete undoped III-V material region between doped III-V materials regions.

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