OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
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Accused Products
Abstract
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).
4 Citations
21 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a substrate; a source electrode and a drain electrode over the substrate; and a semiconductor film between the source electrode and the drain electrode, the semiconductor film comprising a first semiconductor film and a second semiconductor film over the first semiconductor film, wherein a first material of the first semiconductor film has a different composition from a second material of the second semiconductor film, and wherein the second semiconductor film has a higher crystallinity than the first semiconductor film. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a substrate; a source electrode and a drain electrode over the substrate; and a semiconductor film between the source electrode and the drain electrode, the semiconductor film comprising a first semiconductor film and a second semiconductor film over the first semiconductor film, wherein a first material of the first semiconductor film has a different composition from a second material of the second semiconductor film, wherein each of the first semiconductor film and the second semiconductor film comprises crystals, and wherein an alignment of the crystals of the second semiconductor film is higher than an alignment of the crystals of the first semiconductor film. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a substrate; and a semiconductor film including a channel formation region over the substrate, the semiconductor film comprising a first semiconductor film and a second semiconductor film over the first semiconductor film, wherein a first material of the first semiconductor film has a different composition from a second material of the second semiconductor film, and wherein the second semiconductor film has a higher crystallinity than the first semiconductor film. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification