ORIENTED ALUMINA SUBSTRATE FOR EPITAXIAL GROWTH

• US 20180179664A1
• Filed: 02/22/2018
• Published: 06/28/2018
• Est. Priority Date: 09/30/2015
• Status: Active Grant

• Current Assignee: NGK Insulators Limited
• Original Assignee: NGK Insulators Limited
• Inventors: WATANABE, Morimichi, SATO, Kei, MATSUSHIMA, Kiyoshi, NANATAKI, Tsutomu
• Granted Patent: US 10,435,815 B2
• Time in Patent Office: Days
• CPC Class Codes: C04B 2235/3206 Magnesium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/5292 Flakes, platelets or plates
• CPC Class Codes: C04B 2235/60 Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
• CPC Class Codes: C04B 2235/6025 Tape casting, e.g. with a doctor blade
• CPC Class Codes: C04B 2235/6567 Treatment time
• CPC Class Codes: C04B 2235/6586 Processes characterised by the flow of gas
• CPC Class Codes: C04B 2235/72 Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
• CPC Class Codes: C04B 2235/727 Phosphorus or phosphorus compound content
• CPC Class Codes: C04B 2235/728 Silicon content
• CPC Class Codes: C04B 2235/786 Micrometer sized grains, i.e. from 1 to 100 micron
• CPC Class Codes: C04B 2235/787 Oriented grains
• CPC Class Codes: C04B 35/111 Fine ceramics
• CPC Class Codes: C04B 35/622 Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
• CPC Class Codes: C04B 35/6342 Polyvinylacetals, e.g. polyvinylbutyral [PVB]
• CPC Class Codes: C04B 35/638 Removal thereof
• CPC Class Codes: C04B 35/645 Pressure sintering
• CPC Class Codes: C30B 1/12 by pressure treatment during the growth
• CPC Class Codes: C30B 19/02 using molten solvents, e.g. flux
• CPC Class Codes: C30B 19/12 characterised by the substrate
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 25/183 : being provided with a buffer layer, e.g. a lattice matching layer
• CPC Class Codes: C30B 28/02 : directly from the solid state
• CPC Class Codes: C30B 29/20 : Aluminium oxides
• CPC Class Codes: C30B 29/406 : Gallium nitride
• CPC Class Codes: H01L 21/0242 : Crystalline insulating materials
• CPC Class Codes: H01L 21/0243 : Surface structure
• CPC Class Codes: H01L 21/02433 : Crystal orientation
• CPC Class Codes: H01L 21/0254 : Nitrides
• CPC Class Codes: H01L 21/0262 : Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/6835 : using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68345 : used as a support during the manufacture of self supporting substrates
• CPC Class Codes: H01L 2221/6835 : used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 33/007 : comprising nitride compounds
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 : within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 : with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/16 : with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 : containing nitrogen

Abstract

An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

Claims

1. An oriented alumina substrate for epitaxial growth, comprising:

crystalline grains constituting a surface thereof,

the crystalline grains having a tilt angle of 0.1°

or more and less than 1.0° and

an average sintered grain size of 10 μ

m or more.

2. The oriented alumina substrate for epitaxial growth according to claim 1,

wherein the crystalline grains constituting the surface has an average sintered grain size of 20 μ

m or more.

3. The oriented alumina substrate for epitaxial growth according to claim 1,

wherein the content of each of Na, Mg, Si, P, Ca, Fe, Ti, and Zn is 1,500 ppm or less.

4. The oriented alumina substrate for epitaxial growth according to claim 2,

wherein the content of each of Na, Mg, Si, P, Ca, Fe, Ti, and Zn is 1,500 ppm or less.

5. The oriented alumina substrate for epitaxial growth according to claim 1,

wherein the content of Mg is 15 ppm or more.

6. The oriented alumina substrate for epitaxial growth according to claim 2,

wherein the content of Mg is 15 ppm or more.

7. The oriented alumina substrate for epitaxial growth according to claim 3,

wherein the content of Mg is 15 ppm or more.

8. The oriented alumina substrate for epitaxial growth according to claim 4,

wherein the content of Mg is 15 ppm or more.