LIGHT EMITTING DEVICE AND LIGHT EMITTING AND RECEIVING DEVICE

• US 20180184497A1
• Filed: 12/21/2017
• Published: 06/28/2018
• Est. Priority Date: 12/28/2016
• Status: Active Grant

• Current Assignee: Asahi Kasei Microdevices Corporation (Asahi Kasei Corporation)
• Original Assignee: Asahi Kasei Microdevices Corporation (Asahi Kasei Corporation)
• Inventors: FUJITA, Hiromi, SAKURAI, Yoshiki
• Granted Patent: US 10,433,387 B2
• Time in Patent Office: Days
• CPC Class Codes: G01B 11/14 for measuring distance or clearance between spaced objects or spaced apertures G01B11/26 takes precedence; rangefinders G01C3/00
• CPC Class Codes: G01J 5/10 using electric radiation detectors
• CPC Class Codes: G01N 21/3504 for analysing gases, e.g. multi-gas analysis
• CPC Class Codes: G01N 2201/1211 for temperature
• CPC Class Codes: G01N 25/56 by investigating moisture content
• CPC Class Codes: H01L 31/02019 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/162 the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. a light emitting diode
• CPC Class Codes: H01L 31/167 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: H05B 33/04 Sealing arrangements , e.g. against humidity
• CPC Class Codes: H05B 45/20 Controlling the colour of the light
• CPC Class Codes: H05B 47/105 in response to determined parameters

Abstract

A light emitting device including: a light emitting element; a molded resin portion configured to seal at least a portion of the light emitting element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light emitting element and the temperature information; and a controlling unit configured to control the light emitting element, based on the temperature information and the humidity information.

Claims

1. A light emitting device comprising:

a light emitting element;

a molded resin portion configured to seal at least a portion of the light emitting element;

a temperature information acquiring unit configured to acquire temperature information;

a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light emitting element and the temperature information; and

a controlling unit configured to control the light emitting element, based on the temperature information and the humidity information.

2. The light emitting device according to claim 1, wherein

the temperature information includes information relating to temperature of the light emitting element or temperature of the molded resin portion, and the humidity information includes information relating to humidity of the molded resin portion.

3. The light emitting device according to claim 1, further comprising

an auxiliary element at least a portion of which is sealed by the molded resin portion,

wherein at least either the temperature information or the humidity information includes information relating to at least either electrical characteristics or optical characteristics of the auxiliary element.

4. The light emitting device according to claim 3, wherein

the auxiliary element is formed on a same substrate as the light emitting element.

5. The light emitting device according to claim 3, wherein

at least either the light emitting element or the auxiliary element includes a diode structure or is a resistor, the diode structure including indium and at least either arsenic or antimony and including at least a P-type semiconductor layer and an N-type semiconductor layer.

6. A light emitting and receiving device comprising:

a light emitting element;

a light receiving element configured to receive at least a portion of light output by the light emitting element and output an output signal corresponding to amount of received light;

a molded resin portion configured to seal at least a portion of the light emitting element;

a temperature information acquiring unit configured to acquire temperature information;

a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light emitting element and the temperature information; and

a compensating unit configured to compensate the output signal, based on the temperature information and the humidity information.

7. The light emitting and receiving device according to claim 6, wherein

the temperature information includes information relating to at least one of temperature of the light receiving element, temperature of the light emitting element, and temperature of the molded resin portion, and the humidity information includes information relating to humidity of the molded resin portion.

8. The light emitting and receiving device according to claim 6, wherein

the temperature information includes at least either electrical characteristics or optical characteristics of at least either the light receiving element or the light emitting element.

9. The light emitting and receiving device according to claim 6, wherein

the molded resin portion includes:

a light receiving side sealing region configured to seal at least a portion of the light receiving element; and

a light emitting side sealing region configured to seal at least a portion of the light emitting element.

10. The light emitting and receiving device according to claim 9, wherein

the light receiving side sealing region and the light emitting side sealing region are spatially in contact with each other.

11. The light emitting and receiving device according to claim 9, further comprising

a light receiving side auxiliary element at least a portion of which is sealed by the light receiving side sealing region,

wherein at least either the temperature information or the humidity information includes information relating to at least either electrical characteristics or optical characteristics of the light receiving side auxiliary element.

12. The light emitting and receiving device according to claim 11, wherein

the light receiving side auxiliary element is formed on a same light receiving side substrate as the light receiving element.

13. The light emitting and receiving device according to claim 11, wherein

the light receiving side auxiliary element includes a diode structure or is a resistor, the diode structure including indium and at least either arsenic or antimony and including at least a P-type semiconductor layer and an N-type semiconductor layer.

14. The light emitting and receiving device according to claim 9, further comprising

a light emitting side auxiliary element at least a portion of which is sealed by the light emitting side sealing region,

wherein at least either the temperature information or the humidity information includes information relating to at least either electrical characteristics or optical characteristics of the light emitting side auxiliary element.

15. The light emitting and receiving device according to claim 14, wherein

the light emitting side auxiliary element is arranged on a same light emitting side substrate as the light emitting element.

16. The light emitting and receiving device according to claim 14, wherein

the light emitting side auxiliary element includes a diode structure or is a resistor, the diode structure including indium and at least either arsenic or antimony and including at least a P-type semiconductor layer and an N-type semiconductor layer.

17. The light emitting and receiving device according to claim 6, wherein

the light receiving element includes a diode structure or is a resistor, the diode structure including indium and at least either arsenic or antimony and including at least a P-type semiconductor layer and an N-type semiconductor layer.

18. The light emitting and receiving device according to claim 6, wherein

the light emitting element includes a diode structure that includes indium and at least either arsenic or antimony and includes at least a P-type semiconductor layer and an N-type semiconductor layer.