COPPER ALLOY FOR ELECTRONIC/ELECTRICAL DEVICE, COPPER ALLOY PLASTICALLY-WORKED MATERIAL FOR ELECTRONIC/ELECTRICAL DEVICE, COMPONENT FOR ELECTRONIC/ELECTRICAL DEVICE, TERMINAL, AND BUSBAR

• US 20180187292A1
• Filed: 09/08/2016
• Published: 07/05/2018
• Est. Priority Date: 09/09/2015
• Status: Active Grant

• Current Assignee: Mitsubishi Materials Corporation
• Original Assignee: Mitsubishi Materials Corporation
• Granted Patent: US 10,676,803 B2
• Time in Patent Office: Days
• CPC Class Codes: B32B 15/018 one layer being formed of a noble metal or a noble metal alloy
• CPC Class Codes: B32B 15/20 comprising aluminium or copper B32B15/016 and B32B15/017 take precedence
• CPC Class Codes: C22C 9/00 Alloys based on copper
• CPC Class Codes: C22F 1/08 of copper or alloys based thereon
• CPC Class Codes: H01B 1/02 mainly consisting of metals or alloys
• CPC Class Codes: H01B 1/026 Alloys based on copper
• CPC Class Codes: H01B 5/02 Single bars, rods, wires, or strips
• CPC Class Codes: H01R 4/58 characterised by the form or material of the contacting members H01R4/01 takes precedence
• CPC Class Codes: Y10T 428/12431 Foil or filament smaller than 6 mils
• CPC Class Codes: Y10T 428/12903 Cu-base component

Abstract

A copper alloy for an electronic and electric device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and a Cu balance including inevitable impurities, wherein the electrical conductivity of the copper alloy is more than 75% IACS, and a strength ratio TS_TD/TS_LD, which is calculated from strength TS_TD obtained in a tensile test performed in a direction perpendicular to a rolling direction and strength TS_LD obtained in a tensile test performed in a direction parallel to a rolling direction, is more than 0.9 and less than 1.1. The copper alloy may further include P in a range of 0.0005 mass % or more and less than 0.01 mass %.

Claims

1. A copper alloy for an electronic and electric device, said copper alloy comprising:

Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and

a Cu balance including inevitable impurities, wherein

the electrical conductivity of the copper alloy is more than 75% IACS, and

a strength ratio TS_TD/TS_LD is more than 0.9 and less than 1.1, where strength TS_TD is obtained in a tensile test performed in a direction perpendicular to a rolling direction and strength TS_LD is obtained in a tensile test performed in a direction parallel to a rolling direction.

2. The copper alloy for an electronic and electric device according to claim 1, further comprising P in a range of 0.0005 mass % or more and less than 0.01 mass %.

3. The copper alloy for an electronic and electric device according to claim 2, wherein

the Mg content [Mg] in mass % and the P content [P] in mass % satisfy a relational expression of [Mg]+20×

[P]<

0.5.

4. The copper alloy for an electronic and electric device according to claim 2, wherein

the Mg content [Mg] in mass % and the P content [P] in mass % satisfy a relational expression of [Mg]/[P]≤

400.

5. The copper alloy for an electronic and electric device according to claim 1, wherein

a ratio of crystals having a crystal orientation within 10°

with respect to a Brass orientation {110} <

112>

is 40% or less, and

a ratio of crystals having a crystal orientation within 10°

with respect to a Copper orientation {112} <

111>

is 40% or less.

6. A plastically-worked copper alloy material for an electronic and electric device made of the copper alloy for an electronic and electric device according to claim 1.

7. The plastically-worked copper alloy material for an electronic and electric device according to claim 6, wherein a Sn plating layer or a Ag plating layer is provided on a surface of the plastically-worked copper alloy material.

8. A component for an electronic and electric device made of the plastically-worked copper alloy material for an electronic and electric device according to claim 6.

9. A terminal made of the plastically-worked copper alloy material for an electronic and electric device according to claim 6.

10. A busbar made of the plastically-worked copper alloy material for an electronic and electric device according to claim 6.