WAVEGUIDE TRANSITION STRUCTURE AND FABRICATION METHOD

• US 20180188453A1
• Filed: 12/29/2016
• Published: 07/05/2018
• Est. Priority Date: 12/29/2016
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Granted Patent: US 10,054,740 B2
• Time in Patent Office: Days
• CPC Class Codes: G02B 2006/12038 Glass (SiO2 based materials)
• CPC Class Codes: G02B 2006/12147 Coupler
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/136 by etching
• CPC Class Codes: H01P 11/006 Manufacturing dielectric waveguides
• CPC Class Codes: H01P 3/16 Dielectric waveguides, i.e. without a longitudinal conductor

Abstract

Some embodiments of the present disclosure describe a tapered waveguide and a method of making the tapered waveguide, wherein the tapered waveguide comprises a first and a second waveguide, wherein the first and second waveguides overlap in a waveguide overlap area. The first and second waveguides have a different size in at least one dimension perpendicular to an intended direction of propagation of electromagnetic radiation through the tapered waveguide. Across the waveguide overlap area, one of the waveguides gradually transitions or tapers into the other.

Claims

1. A waveguide transition structure, comprising:

a first waveguide comprising a first waveguide top plain on an first level, wherein the first waveguide top plain has a width X;

a second waveguide comprising a second waveguide top plain on a second level adjacent to the first waveguide top plain, wherein the first and second waveguides overlap in a waveguide overlap area; and

wherein the first waveguide top plain comprises;

a first taper across the waveguide overlap area, wherein the first taper reduces the width X to zero; and

a second taper across the waveguide overlap area disposed on a side of the first waveguide adjacent to the first top plain, wherein the second taper forms a surface that gradually transitions the first top plain on the first level to the second top plain on the second level.

2. The structure according to claim 1, wherein the first and second waveguides are formed in one continuous epitaxial silicon film on a silicon dioxide substrate.

3. The structure according to claim 2, wherein the epitaxial silicon film comprises a crystalline lattice, wherein the crystalline lattice comprises at least one crystalline lattice axis perpendicular to an axis of propagation of electromagnetic radiation through the first and second waveguides.

4. The structure according to claim 1, wherein the width X is perpendicular to an axis of propagation of electromagnetic radiation through the first and second waveguides.

5. The structure according to claim 1, further comprising at least one of a first transmitter or receiver optically coupled to the first waveguide or a second transmitter or receiver optically coupled to the second waveguide.

6. The structure according to claim 1, wherein a width of the second waveguide top plain is one of constant across a length of the first taper or increases as the first taper reduces the width X to zero.

7. The structure according to claim 6, wherein the width of the second waveguide top plain increases in parallel to a reduction in the first taper as the first taper reduces the width X to zero.

8. The structure according to claim 1, wherein the second waveguide comprises a second waveguide taper, wherein the second waveguide taper reduces a width of the second waveguide before an optical couple to a transmitter or receiver and wherein the second waveguide taper begins after the waveguide overlap area.

26. The waveguide transition structure of claim 1, wherein the surface is a selected one of a planar surface or a curved surface.

9. A method of fabricating a waveguide transition structure, comprising:

removing a patterned oxidized volume from an epitaxial film to leave an elevated structure on the epitaxial film, wherein the elevated structure tapers from a first width to zero across a waveguide overlap area, wherein the first width is equal to or greater than a width X;

applying a mask to a band along a surface of the epitaxial film, wherein the band along the surface of the epitaxial film comprises a portion of the elevated structure above the waveguide overlap area;

etching the surface of the epitaxial film to remove a volume of the epitaxial film not protected by the mask;

removing the mask to leave a first waveguide comprising a first waveguide top plain with the width X and a second waveguide comprising a second waveguide top plain on a second level below the first waveguide top plain;

wherein

the first and second waveguides overlap in the waveguide overlap area and wherein the first waveguide top plain comprises;

a first taper across the waveguide overlap area, wherein the first taper reduces the width X to zero; and

a second taper across the waveguide overlap area disposed on a side of the first waveguide adjacent to the first top plain, wherein the second taper forms a surface that gradually transitions the first top plain on the first level to the second top plain on the second level.

10. The method according to claim 9, further comprising selectively oxidizing the epitaxial film to form the patterned oxidized volume.

11. The method according to claim 10, wherein selectively oxidizing comprises applying a tapered oxidation mask to the epitaxial film and oxidizing the epitaxial film.

12. The method according to claim 11, wherein the tapered oxidation mask comprises at least one of a silicon nitride mask chemically bonded to the epitaxial film or a rigid mask and oxidizing the epitaxial film comprises at least one of thermally oxidizing the epitaxial film or performing chemical vapor deposition of oxide.

13. The method according to claim 9, wherein the mask is a photolithographic mask.

14. The method according to claim 9, wherein at least one of removing the patterned oxidized volume or etching the surface of the epitaxial film comprises at least one of a dry etch process or a wet etch process.

15. The method according to claim 14, wherein removing the patterned oxidized volume comprises removing the patterned oxidized volume with the wet etch process and wherein etching the surface of the epitaxial film comprises the dry etch process.

16. The method according to claim 14, wherein the dry etch process is anisotropic and the wet etch process is isotropic.

17. The method according to claim 9, wherein etching the surface of the epitaxial film to remove the volume of the epitaxial film not protected by the mask comprises etching the surface of the epitaxial film to uniformly remove the volume of the epitaxial film not protected by the mask.

18. The method according to claim 9, further comprising optically coupling a first transmitter or receiver to the first waveguide and a second transmitter or receiver to the second waveguide.

19. The method according to claim 9, wherein a width of the second waveguide top plain inside of the waveguide overlap area is one of i) constant across a length of the first taper or ii) increases as the first taper reduces the width X to zero and decreases outside of the waveguide overlap area to less than the width X.

20. An optical system comprising:

a waveguide transition structure, wherein the waveguide transition structure comprises a first waveguide and a second waveguide;

a first transmitter or receiver of electromagnetic radiation optically coupled to the first waveguide and a second transmitter or receiver of electromagnetic radiation optically coupled to the second waveguide;

wherein the first waveguide comprises a first waveguide top plain on an first level, wherein the first waveguide top plain has a width X;

the second waveguide comprising a second waveguide top plain on a second level adjacent to the first waveguide top plain;

wherein,

the first and second waveguides overlap in a waveguide overlap area; and

wherein the first waveguide top plain comprises;

a first taper across the waveguide overlap area, wherein the first taper reduces the width X to zero; and

a second taper across the waveguide overlap area disposed on a side of the first waveguide adjacent to the first top plain, wherein the second taper forms a surface that gradually transitions the first top plain on the first level to the second top plain on the second level.

21. The system according to claim 20, wherein the first and second waveguides are formed in one continuous epitaxial silicon film on a silicon dioxide substrate.

22. The system according to claim 21, wherein the epitaxial silicon film comprises a crystalline lattice, wherein the crystalline lattice comprises at least one crystalline lattice axis perpendicular to an axis of propagation of electromagnetic radiation through the first and second waveguides.

23. The system according to claim 20, wherein the width X is perpendicular to an axis of propagation of electromagnetic radiation through the first and second waveguides.

24. The system according to claim 20, wherein a width of the second waveguide top plain is one of constant across a length of the first taper or increases as the first taper reduces the width X to zero.

25. The system according to claim 20, wherein the second waveguide comprises a second waveguide taper, wherein the second waveguide taper reduces a width of the second waveguide before the second transmitter or receiver and wherein the second waveguide taper begins after the waveguide overlap area.