METHOD AND STRUCTURE FOR PROTECTING GATES DURING EPITAXIAL GROWTH
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Accused Products
Abstract
Embodiments of the present invention provide methods and structures for protecting gates during epitaxial growth. An inner spacer of a first material is deposited adjacent a transistor gate. An outer spacer of a different material is deposited adjacent the inner spacer. Stressor cavities are formed adjacent the transistor gate. The inner spacer is recessed, forming a divot. The divot is filled with a material to protect the transistor gate. The stressor cavities are then filled. As the gate is safely protected, unwanted epitaxial growth (“mouse ears”) on the transistor gate is prevented.
138 Citations
20 Claims
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1-5. -5. (canceled)
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6. A semiconductor structure, comprising:
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a semiconductor substrate; a transistor gate disposed on the semiconductor substrate; a lower inner spacer disposed adjacent to a lower portion of the transistor gate; an upper inner spacer disposed adjacent to an upper portion of the transistor gate and in contact with the lower inner spacer; and an outer spacer disposed adjacent to the lower inner spacer and the upper inner spacer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor structure, comprising:
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a semiconductor substrate; a first transistor gate and a second transistor gate disposed on the semiconductor substrate; a full inner spacer disposed adjacent to the first transistor gate; an outer spacer disposed adjacent to the full inner spacer; a lower inner spacer disposed adjacent to a lower portion of the second transistor gate; an upper inner spacer disposed adjacent to an upper portion of the second transistor gate and in contact with the lower inner spacer; and an outer spacer disposed adjacent to the lower inner spacer and upper inner spacer of the second transistor gate. - View Dependent Claims (17, 18, 19, 20)
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Specification