LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
1 Assignment
0 Petitions
Accused Products
Abstract
Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
51 Citations
20 Claims
-
1. (canceled)
-
2. A semiconductor device comprising:
-
a support with flexibility; a base layer over the support; a transistor over the base layer comprising; a gate electrode; a semiconductor layer; a first insulating layer between the gate electrode and the semiconductor layer; source and drain electrodes electrically connected to the semiconductor layer; and a second insulating layer having an opening over and in contact with the source and drain electrodes; and a conductive layer electrically connected to one of the source and drain electrodes through the opening, wherein the conductive layer is in contact with a side surface of the semiconductor layer. - View Dependent Claims (5, 7, 9, 11, 13, 15, 17, 19)
-
-
3. A semiconductor device comprising:
-
a support with flexibility; a base layer over the support; a transistor over the base layer comprising; a gate electrode; a semiconductor layer; a first insulating layer between the gate electrode and the semiconductor layer; source and drain electrodes electrically connected to the semiconductor layer; and a second insulating layer having an opening over and in contact with the source and drain electrodes; and a conductive layer electrically connected to one of the source and drain electrodes through the opening; and a capacitor over the base layer, comprising a capacitor wiring, the semiconductor layer, the first insulating layer, the second insulating layer, and the conductive layer, wherein the conductive layer is in contact with a side surface of the semiconductor layer. - View Dependent Claims (4, 6, 8, 10, 12, 14, 16, 18, 20)
-
Specification