SENSOR

• US 20180231621A1
• Filed: 09/15/2017
• Published: 08/16/2018
• Est. Priority Date: 02/15/2017
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: HIGASHI, Yoshihiro, HARA, Michiko, NAGATA, Tomohiko, KAJI, Shiori, FUJI, Yoshihiko, YUZAWA, Akiko, OTSU, Kenji, OKAMOTO, Kazuaki, BABA, Shotaro
• Granted Patent: US 10,495,702 B2
• Time in Patent Office: Days
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00

Abstract

According to one embodiment, a sensor includes a first film, a first sensor portion, a driving portion, and a processor. The first sensor portion is provided at the first film. The first sensor portion includes a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first film and the first magnetic layer. The first intermediate layer is provided between the first magnetic layer and the second magnetic layer. The driving portion causes the first film to deform at a first frequency. The processor outputs a third signal based on a first signal and a second signal. The first signal relates to the first frequency. The second signal is output from the first sensor portion.

Claims

1. A sensor, comprising:

a first film;

a first sensor portion provided at the first film, the first sensor portion including

a first magnetic layer,

a second magnetic layer provided between the first film and the first magnetic layer, and

a first intermediate layer provided between the first magnetic layer and the second magnetic layer;

a driving portion configured to cause the first film to deform at a first frequency; and

a processor configured to output a third signal based on a first signal and a second signal, the first signal relating to the first frequency, the second signal being output from the first sensor portion.

2. The sensor according to claim 1, wherein the driving portion applies stress to the first film.

3. The sensor according to claim 2, wherein the driving portion emits a pressure wave of the first frequency toward the first film.

4. The sensor according to claim 2, further comprising a support portion supporting the first film,

the support portion being fixed to the driving portion,

the driving portion being configured to vibrate at the first frequency.

5. The sensor according to claim 1, wherein

the processor supplies the first signal to the driving portion, and

the driving portion causes the first film to deform based on the first signal.

6. The sensor according to claim 1, wherein the processor acquires the first signal from the driving portion.

7. The sensor according to claim 3, wherein the first film is provided between the driving portion and the first sensor portion.

8. The sensor according to claim 1, further comprising a first sensor conductive layer and a second sensor conductive layer,

the first sensor portion being provided between the first sensor conductive layer and the first film,

the second sensor conductive layer being provided between the first sensor portion and the first film.

9. The sensor according to claim 1, wherein the deforming of the first film includes a component in a first direction, the first direction being from the first magnetic layer toward the second magnetic layer.

10. The sensor according to claim 1, wherein

the second signal is a signal modulated by the deforming of the first film, and

the processor outputs the third signal by demodulating the second signal.

15. The sensor according to claim 1, wherein

a magnetic field vibrating at a second frequency is applied to the first sensor portion, and

the third signal includes a component of the second frequency.

16. The sensor according to claim 15, wherein the second frequency is lower than the first frequency.

17. The sensor according to claim 15, wherein the second frequency is not less than 1 hertz and not more than 1000 hertz.

18. The sensor according to claim 1, wherein the first frequency is not less than 1 kilohertz and not more than 100 kilohertz.

11. A sensor, comprising:

a piezoelectric body layer;

a first sensor portion provided at the piezoelectric body layer, the first sensor portion including

a first magnetic layer,

a second magnetic layer provided between the piezoelectric body layer and the first magnetic layer, and

a first intermediate layer provided between the first magnetic layer and the second magnetic layer;

a processor configured to apply a voltage of a first frequency to the piezoelectric body layer and output a third signal, the third signal being based on a first signal and a second signal, the first signal relating to the first frequency, the second signal being output from the first sensor portion.

12. The sensor according to claim 11, further comprising a first element conductive layer and a second element conductive layer,

the first element conductive layer being provided between the second element conductive layer and the first sensor portion,

the piezoelectric body layer being provided between the first element conductive layer and the second element conductive layer.

13. The sensor according to claim 12, further comprising a support portion supporting a first element portion, the first element portion including the piezoelectric body layer, the first element conductive layer, and the second element conductive layer,

the first element portion including a first element region and a second element region,

the second element region being fixed to the support portion,

the first element region being connected to the second element region,

the first sensor portion being provided at the first element region.

14. The sensor according to claim 11, wherein

the second signal is a signal modulated by the deforming of the piezoelectric body, and

the processor outputs the third signal by demodulating the second signal.