SELECTIVE PASSIVATION AND SELECTIVE DEPOSITION

• US 20180233350A1
• Filed: 02/09/2018
• Published: 08/16/2018
• Est. Priority Date: 02/14/2017
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Tuominen, Marko, Maes, Jan Willem, Haukka, Suvi P., MATERO, Raija H., Tois, Eva E., Longrie, Delphine, Illiberi, Andrea, Suemori, Hidemi, Raaijmakers, Ivo Johannes, Farm, Elina, Deng, Shaoren
• Granted Patent: US 11,094,535 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/0272 for lift-off processes
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32 using masks
• CPC Class Codes: H01L 21/321 After treatment
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/3171 the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/528 : Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/53238 : Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53295 : Stacked insulating layers

Abstract

Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

Claims

1. A method of selective deposition on a second surface of a part relative to a first surface of the part, where the first and second surfaces have different compositions, the method comprising:

selectively forming a passivation layer from vapor phase reactants on the first surface while leaving the second surface without the passivation layer; and

selectively depositing a layer of interest from vapor phase reactants on the second surface relative to the passivation layer.

3. The method of claim 1, wherein selectively forming the passivation layer comprises selectively depositing a polymer layer on the first surface.

4. The method of claim 3, wherein selectively forming the passivation layer further comprises etching any polymer from the second surface while leaving some polymer on the first surface.

9. The method of claim 1, wherein selectively forming the passivation layer comprises depositing polyimide.

11. The method of claim 1, wherein the first surface comprises a metallic material and the second surface comprises an inorganic dielectric material.

12. The method of claim 11, wherein selectively depositing the layer of interest comprises depositing a dielectric material on the second surface.

15. The method of claim 1, wherein the first surface comprises an inorganic dielectric material and the second surface comprises a metallic material.

16. The method of claim 15, wherein selectively forming the passivation layer comprises forming a passivation blocking layer on the second surface and subsequently selectively vapor depositing a polymer layer on the first surface relative to the passivation blocking layer.

21. The method of claim 16, further comprising removing the passivation blocking layer from the second surface without removing the passivation layer from the first surface and subsequently selectively depositing the layer of interest on second surface relative to the passivation layer.

22. The method of claim 15, wherein selectively depositing the layer of interest comprises depositing a dielectric material on the second surface.

25. The method of claim 15, wherein selectively depositing the layer of interest comprises depositing a metal layer.

26. The method of claim 25, further comprising selectively depositing a dielectric layer on the metal layer relative to the passivation layer.

27. The method of claim 1, further comprising selectively removing the passivation layer from the first surface after selectively depositing the layer of interest on the second surface without removing the layer of interest.

30. The method of claim 3, wherein selectively forming the passivation layer further comprises etching any polymer from the second surface while leaving some polymer on the first surface.

31. The method of claim 30, wherein an edge of the layer of interest is aligned with a boundary between the first and second surfaces.

32. The method of claim 30, wherein the layer of interest overlaps with the first surface.

33. The method of claim 32, wherein the first surface is elevated above the second surface.

34. The method of claim 30, wherein after removing the passivation layer, a gap exposing the second surface exists between an edge of the layer of interest and a boundary between the first and second surfaces.

35. The method of claim 34, further comprising selectively etching the second surface in the gap to form a cavity.

36. The method of claim 35, further comprising depositing a cavity filling material in a manner that leaves an air-gap within the cavity.

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