SEMICONDUCTOR DEVICE
First Claim
Patent Images
1. A semiconductor device, comprising:
- first and second circuit patterns;
an IGBT disposed on the first circuit pattern such that a collector of the IGBT directly contacts the first circuit pattern and an emitter of the IGBT is disposed above the collector of the IGBT; and
a diode disposed on the second circuit pattern such that an anode of the diode directly contacts the second circuit pattern and a cathode of the diode is disposed above the anode of the diode, whereinthe emitter of the IGBT and the cathode of the diode are electrically connected to an intermediate connection point.
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Accused Products
Abstract
A first diode having a front surface anode region is mounted on a P pattern, and a second diode having a front surface cathode region is mounted on an N pattern. At this time, the first diode and the second diode are formed such that a cathode region of a front surface anode region in a first vertical relationship and an anode region of a front surface cathode region in a second vertical relationship are always located as upper portions. The front surface anode region is electrically connected to the front surface cathode region with wires provided thereover.
9 Citations
4 Claims
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1. A semiconductor device, comprising:
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first and second circuit patterns; an IGBT disposed on the first circuit pattern such that a collector of the IGBT directly contacts the first circuit pattern and an emitter of the IGBT is disposed above the collector of the IGBT; and a diode disposed on the second circuit pattern such that an anode of the diode directly contacts the second circuit pattern and a cathode of the diode is disposed above the anode of the diode, wherein the emitter of the IGBT and the cathode of the diode are electrically connected to an intermediate connection point. - View Dependent Claims (3)
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2. A semiconductor device, comprising:
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a circuit pattern; a diode disposed on the circuit pattern such that an anode of the diode directly contacts the circuit pattern and a cathode of the diode is disposed above the anode of the diode; and an IGBT disposed on the circuit pattern such that a collector of the IGBT directly contacts the circuit pattern and an emitter of the IGBT is disposed above the collector of the IGBT, wherein the anode of the diode is electrically connected to the collector of the IGBT through the circuit pattern that serves as an intermediate connection point. - View Dependent Claims (4)
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Specification