OPTICAL MODULATOR AND ELECTRIC FIELD SENSOR

• US 20180238949A1
• Filed: 10/07/2016
• Published: 08/23/2018
• Est. Priority Date: 10/16/2015
• Status: Active Grant

• Current Assignee: JX Nippon Mining & Metals Corporation (ENEOS Holdings, Inc.)
• Original Assignee: JX Nippon Mining & Metals Corporation (ENEOS Holdings, Inc.)
• Inventors: Shinagawa, Mitsuru, Asahi, Toshiaki
• Granted Patent: US 10,641,807 B2
• Time in Patent Office: Days
• CPC Class Codes: G01R 1/071 containing electro-optic elements
• CPC Class Codes: G01R 15/242 based on the Pockels effect, i.e. linear electro-optic effect
• CPC Class Codes: G01R 29/0885 using optical probes, e.g. electro-optical, luminescent, glow discharge, or optical interferometers
• CPC Class Codes: G02B 27/0977 Reflective elements
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01S 3/0064 Anti-reflection devices, e.g. optical isolaters absorbing layers for marking or protecting purposes in laser working B23K26/50; magneto-optical non-reciprocal devices G02F1/093, G02F1/0955

Abstract

In an optical modulator capable of modulating incident laser beam L by a compound semiconductor single crystal having a property of generating an electro-optic effect, the attenuation of the signal strength in a low frequency band is prevented without lowering the carrier concentration of the compound semiconductor.

The optical modulator 23 comprises: incidence limiting means 25 which is provided on or near an incidence plane 24a, on which the laser beam L can be incident, of the compound semiconductor single crystal 24 so as to limit incidence of light other than the laser beam L on the incidence plane 24a; and a shielding member 26 which is formed from a low-permittivity material having a light blocking effect, and covers a surface 24c of the compound semiconductor single crystal 24 extending along a traveling direction of the laser beam L that entered the compound semiconductor single crystal 24.

Claims

1. An optical modulator capable of modulating incident laser beam by a compound semiconductor single crystal having a property of generating an electro-optic effect, the optical modulator comprising:

incidence limiting means which is provided on or near an incidence plane, on which the laser beam can be incident, of the compound semiconductor single crystal so as to limit incidence of light other than the laser beam on the incidence plane; and

a shielding member which is formed from a low-permittivity material having a light blocking effect, and covers a surface of the compound semiconductor single crystal that extends along a traveling direction of the laser beam that entered the compound semiconductor single crystal.

2. The optical modulator according to claim 1, wherein the incidence limiting means is a dichroic mirror which is configured to permit the passage of only light of the same wavelength as the laser beam, and is attached to the incidence plane.

3. The optical modulator according to claim 1, wherein the incidence limiting means is a shielding plate in which a pinhole penetrating in a thickness direction and having a diameter substantially equal to a width of the laser beam is formed, and which is attached to the incidence plane.

4. The optical modulator according to claim 1, wherein the incidence limiting means is configured such that the shielding member extends beyond the incidence plane in a direction from which the laser beam enters.

5. The optical modulator according to claim 4, wherein an antireflection film which prevents the laser beam from reflecting off the incidence plane is formed between the incidence plane and the incidence limiting means.

6. An electric field sensor, comprising:

the optical modulator according to claim 1;

a light source to cause a laser beam to be incident on the incidence plane; and

conversion means to convert changes in polarization of the laser beam that passed through the optical modulator, into an electric signal.

7. The electric field sensor according to claim 6, wherein the incidence limiting means of the optical modulator is a dichroic mirror which is configured to permit the passage of only light of the same wavelength as the laser beam, and is attached to the incidence plane.

8. The electric field sensor according to claim 6, wherein the incidence limiting means of the optical modulator is a shielding plate in which a pinhole penetrating in a thickness direction and having a diameter substantially equal to a width of the laser beam is formed, and which is attached to the incidence plane.

9. The electric field sensor according to claim 6, wherein the incidence limiting means of the optical modulator is configured such that the shielding member extends beyond the incidence plane in a direction from which the laser beam enters.

10. The electric field sensor according to claim 9, wherein an antireflection film which prevents the laser beam from reflecting off the incidence plane is formed between the incidence plane and the incidence limiting means.

11. The electric field sensor according to claim 8, wherein an antireflection film which prevents the laser beam from reflecting off the incidence plane is formed between the incidence plane and the incidence limiting means.

12. The optical modulator according to claim 3, wherein an antireflection film which prevents the laser beam from reflecting off the incidence plane is formed between the incidence plane and the incidence limiting means.