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GAS REACTION TRAJECTORY CONTROL THROUGH TUNABLE PLASMA DISSOCIATION FOR WAFER BY-PRODUCT DISTRIBUTION AND ETCH FEATURE PROFILE UNIFORMITY

  • US 20180240677A1
  • Filed: 04/20/2018
  • Published: 08/23/2018
  • Est. Priority Date: 03/31/2015
  • Status: Active Grant
First Claim
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1. A method for delivering gases to a plasma processing chamber having a substrate support for supporting a substrate, a dielectric window disposed over the substrate support, a center region of the dielectric window includes a gas feed injector that has an inner feed and an outer feed that surrounds the inner feed, and an electrode is disposed over the dielectric window, the method comprising:

  • convectively flowing a reactant gas into the plasma processing chamber via the inner feed of the gas feed injector;

    diffusively flowing a tuning gas into the plasma processing chamber via the outer feed of the gas feed injector, the tuning gas having a different chemical composition than the reactant gas, the tuning gas is fed via the outer feed and into the plasma processing chamber at an angle that is away from the reactant gas that is fed via the inner feed and into the plasma processing chamber;

    providing radio frequency (RF) power to the electrode, wherein a fraction of the tuning gas that is diffusively flown into the plasma processing chamber is exposed to the RF power and disassociated before mixing with the reactant gas that is convectively flown into the plasma processing chamber, wherein the RF power is configured to ignite a plasma using a mixture of the tuning gas, the fraction of tuning gas that is disassociated, and the reactant gas; and

    adjusting a rate of flow of one or both of the convectively flown reactant gas and the diffusively flown tuning gas to control etch uniformity across a surface of the substrate.

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