LIGHT IRRADIATION TYPE HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD
First Claim
1. A heat treatment apparatus for irradiating a disk-shaped substrate with a flash of light to heat the substrate, said heat treatment apparatus comprising:
- an alignment mechanism for adjusting a direction of a substrate;
a chamber for receiving said substrate therein and heat-treating said substrate;
a susceptor which is disposed in said chamber and on which said substrate is placed and held;
a transport part for transporting said substrate from said alignment mechanism to said susceptor in said chamber;
a flash lamp that is provided over said chamber and irradiates with a flash of light an upper surface of said substrate placed on said susceptor; and
a radiation thermometer that is disposed diagonally above said substrate placed on said susceptor and receives infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface,said alignment mechanism adjusting the direction of said substrate so that a diameter along a direction in which a warp of said substrate is smallest coincides with an optical axis of said radiation thermometer when said flash lamp emits a flash of light.
1 Assignment
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Accused Products
Abstract
A semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon is warped along an axis, i.e., a diameter along a <100> direction of the semiconductor wafer when irradiated with a flash of light. The semiconductor wafer is placed on a susceptor while the direction of the semiconductor wafer is adjusted so that the diameter along the <100> direction coincides with an optical axis of an upper radiation thermometer. This adjustment makes a diameter along a direction in which a warp of the semiconductor wafer is smallest during irradiation with a flash of light coincide with the optical axis of the upper radiation thermometer. As a result, the semiconductor wafer is hardly warped along the optical axis direction of the upper radiation thermometer even during irradiation with a flash of light, thus hardly changing the emissivity of the semiconductor wafer, so that it is possible to accurately measure the temperature of an upper surface of the semiconductor wafer.
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Citations
8 Claims
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1. A heat treatment apparatus for irradiating a disk-shaped substrate with a flash of light to heat the substrate, said heat treatment apparatus comprising:
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an alignment mechanism for adjusting a direction of a substrate; a chamber for receiving said substrate therein and heat-treating said substrate; a susceptor which is disposed in said chamber and on which said substrate is placed and held; a transport part for transporting said substrate from said alignment mechanism to said susceptor in said chamber; a flash lamp that is provided over said chamber and irradiates with a flash of light an upper surface of said substrate placed on said susceptor; and a radiation thermometer that is disposed diagonally above said substrate placed on said susceptor and receives infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface, said alignment mechanism adjusting the direction of said substrate so that a diameter along a direction in which a warp of said substrate is smallest coincides with an optical axis of said radiation thermometer when said flash lamp emits a flash of light. - View Dependent Claims (2)
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3. A heat treatment apparatus for irradiating a disk-shaped substrate with a flash of light to heat the substrate, said heat treatment apparatus comprising:
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an alignment mechanism for adjusting a direction of a substrate; a chamber for receiving said substrate therein and heat-treating said substrate; a susceptor which is disposed in said chamber and on which said substrate is placed and held; a transport part for transporting said substrate from said alignment mechanism to said susceptor in said chamber; a flash lamp that is provided over said chamber and irradiates with a flash of light an upper surface of said substrate placed on said susceptor; and a radiation thermometer that is disposed diagonally above said substrate placed on said susceptor and receives infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface, said substrate being a semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon, and said alignment mechanism adjusting the direction of said substrate so that a bisector of an angle between two diameters along a <
100>
direction of said substrate coincides with an optical axis of said radiation thermometer.
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4. A heat treatment apparatus for irradiating a disk-shaped substrate with a flash of light to heat the substrate, said heat treatment apparatus comprising:
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an alignment mechanism for adjusting a direction of a substrate; a chamber for receiving said substrate therein and heat-treating said substrate; a susceptor which is disposed in said chamber and on which said substrate is placed and held; a transport part for transporting said substrate from said alignment mechanism to said susceptor in said chamber; a flash lamp that is provided over said chamber and irradiates with a flash of light an upper surface of said substrate placed on said susceptor; a first radiation thermometer that is disposed diagonally above said substrate placed on said susceptor and receives infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface; and a second radiation thermometer that is disposed diagonally above said substrate and separated from said first radiation thermometer by 90°
with a center of said substrate viewed as a vertex and that receives infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface,said substrate being a semiconductor wafer having a plane orientation of (100) and is made of monocrystalline silicon, and said alignment mechanism adjusting the direction of said substrate so that two diameters along a <
100>
direction of said substrate coincide with optical axes of said first radiation thermometer and said second radiation thermometer.
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5. A heat treatment method of irradiating a disk-shaped substrate with a flash of light to heat the substrate, said method comprising the steps of:
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(a) placing and holding a substrate on a susceptor disposed in a chamber; (b) irradiating an upper surface of said substrate placed on said susceptor with a flash of light from a flash lamp provided over said chamber; and (c) receiving infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface by a radiation thermometer disposed diagonally above said substrate placed on said susceptor, said substrate being placed on said susceptor in said step (a) so that a diameter along a direction in which a warp of said substrate is smallest coincides with an optical axis of said radiation thermometer when a flash of light is emitted in said step (b). - View Dependent Claims (6)
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7. A heat treatment method of irradiating a disk-shaped substrate with a flash of light to heat the substrate, said method comprising the steps of:
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(a) placing and holding a substrate on a susceptor disposed in a chamber; (b) irradiating an upper surface of said substrate placed on said susceptor with a flash of light from a flash lamp provided over said chamber; and (c) receiving infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface by a radiation thermometer disposed diagonally above said substrate placed on said susceptor, said substrate being a semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon, and said substrate being placed on said susceptor in said step (a) so that a bisector of an angle between two diameters along a <
100>
direction of said substrate coincides with an optical axis of said radiation thermometer.
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8. A heat treatment method of irradiating a disk-shaped substrate with a flash of light to heat the substrate, said method comprising the steps of:
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(a) placing and holding a substrate on a susceptor disposed in a chamber; (b) irradiating an upper surface of said substrate placed on said susceptor with a flash of light from a flash lamp provided over said chamber; and (c) receiving infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface by a first radiation thermometer disposed diagonally above said substrate placed on said susceptor, or a second radiation thermometer that is disposed diagonally above said substrate and separated from said first radiation thermometer by 90°
with a center of said substrate viewed as a vertex,said substrate being a semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon, and said substrate being placed on said susceptor in said step (a) so that two diameters along a <
100>
direction of said substrate coincide with optical axes of said first radiation thermometer and said second radiation thermometer.
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Specification