PLASMA ETCHING METHOD

• US 20180240690A1
• Filed: 02/15/2018
• Published: 08/23/2018
• Est. Priority Date: 02/17/2017
• Status: Active Grant

• Current Assignee: Disco Corporation
• Original Assignee: Disco Corporation
• Inventors: Chito, Kenta
• Granted Patent: US 10,453,719 B2
• Time in Patent Office: Days
• CPC Class Codes: H01J 2237/1825 Evacuating means
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/67132 Apparatus for placing on an insulating substrate, e.g. tape
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Abstract

Disclosed herein is a plasma etching method for plasma-etching a ground surface of a wafer after the wafer with a tape attached to its lower surface is ground. The plasma etching method includes a drying step of applying heat to the tape to remove water present in the tape, an electrostatic holding step of electrostatically holding the wafer by an electrostatic force generated by supplying DC power to electrodes of an electrostatic chuck, after the drying step, and an etching step of reducing the pressure of a reduced-pressure chamber and plasma-etching the ground surface of the wafer by a reaction gas brought into a plasma state, after the electrostatic holding step.

Claims

1. A plasma etching method for plasma-etching a ground surface of a wafer by a plasma etching apparatus after the wafer with a tape attached to its surface on one side is subjected to grinding of its surface on an other side by a grinding wheel while supplying grinding water,

the plasma etching apparatus including an electrostatic chuck for holding the wafer through the tape by an electrostatic force generated by supplying direct current power to electrodes disposed inside, and a reduced-pressure chamber which accommodates the electrostatic chuck holding the wafer, the pressure inside which is reduced, in which a reaction gas is brought into a plasma state, and in which plasma etching of the wafer is conducted,

the plasma etching method comprising:

a drying step of applying heat to the tape to remove water present in the tape;

an electrostatic holding step of supplying direct current power to the electrodes of the electrostatic chuck to generate static electricity and to thereby electrostatically hold the wafer, after the drying step; and

an etching step of reducing the pressure in the reduced-pressure chamber, and plasma-etching the ground surface of the wafer held by the electrostatic chuck by the reaction gas brought into the plasma state, after the electrostatic holding step.