NANOSHEET TRANSISTORS WITH SHARP JUNCTIONS
First Claim
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1. A semiconductor device comprising:
- a nanosheet stack over a substrate, the nanosheet stack having a plurality of nanosheets alternating with a plurality of sacrificial layers, arranged such that a topmost and a bottommost layer of the nanosheet stack is a sacrificial layer of the plurality of sacrificial layers;
an oxide recess on a first and a second end of each sacrificial layer; and
a doped extension region on a first and a second end of each nanosheet.
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Abstract
A method of forming a semiconductor device and resulting structures having nanosheet transistors with sharp junctions by forming a nanosheet stack over a substrate, the nanosheet stack having a plurality of nanosheets alternating with a plurality of sacrificial layers, such that a topmost and a bottommost layer of the nanosheet stack is a sacrificial layer; forming an oxide recess on a first and a second end of each sacrificial layer; and forming a doped extension region on a first and a second end of each nanosheet.
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Citations
9 Claims
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1. A semiconductor device comprising:
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a nanosheet stack over a substrate, the nanosheet stack having a plurality of nanosheets alternating with a plurality of sacrificial layers, arranged such that a topmost and a bottommost layer of the nanosheet stack is a sacrificial layer of the plurality of sacrificial layers; an oxide recess on a first and a second end of each sacrificial layer; and a doped extension region on a first and a second end of each nanosheet. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification