METHOD FOR MANUFACTURING A TRANSISTOR AND METHOD FOR MANUFACTURING A RING OSCILLATOR USING THE SAME
First Claim
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1. A method for manufacturing a transistor, the method comprising:
- forming a gate structure on a semiconductor substrate;
forming a first material layer including a first material to expose an upper sidewall of the gate structure;
forming a spacer including a second material on the upper sidewall of the gate structure;
isotropically etching the first material layer using the spacer as an etch mask to form a space; and
forming an insulating interlayer over the semiconductor substrate including the gate structure,wherein the insulating interlayer is not formed in the space so that an air spacer is formed in the space.
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Abstract
In a method for manufacturing a transistor, a gate structure may be formed on a semiconductor substrate. A first material layer may be formed on the gate structure to expose an upper sidewall of the gate structure. A spacer including a second material layer may be formed on the upper sidewall of the gate structure. The first material layer may be isotropically etched using the spacer as an etch mask to form a space. An insulating interlayer may be formed on the semiconductor substrate. The insulating interlayer may not be formed in the space.
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Citations
20 Claims
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1. A method for manufacturing a transistor, the method comprising:
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forming a gate structure on a semiconductor substrate; forming a first material layer including a first material to expose an upper sidewall of the gate structure; forming a spacer including a second material on the upper sidewall of the gate structure; isotropically etching the first material layer using the spacer as an etch mask to form a space; and forming an insulating interlayer over the semiconductor substrate including the gate structure, wherein the insulating interlayer is not formed in the space so that an air spacer is formed in the space. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for manufacturing a transistor, the method comprising:
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forming a gate structure on a semiconductor substrate; forming a first spacer on a lower sidewall of the gate structure; forming a second spacer over the first spacer; selectively removing the first spacer by supplying an etchant through an exposed side surface of the first spacer to form a space under the second spacer; and forming an insulating interlayer over the semiconductor substrate including the gate structure, wherein the insulating interlayer is not formed in the space so that an air spacer is formed in the space. - View Dependent Claims (17, 18)
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19. A method for manufacturing a ring oscillator including serially connected inverters, each inverter including an NMOS transistor and a PMOS transistor, the method comprising:
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forming a gate structure on a semiconductor substrate; forming a first spacer on a lower sidewall of the gate structure; forming a second spacer over the first spacer; selectively removing the first spacer by supplying an etchant through an exposed side surface of the first spacer to form a space under the second spacer; and forming an insulating interlayer over the semiconductor substrate including the gate structure, wherein the insulating interlayer is not formed in the space so that an air spacer is formed in the space. - View Dependent Claims (20)
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Specification