POWER AMPLIFIER MODULE
First Claim
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1. A power amplifier module comprising:
- a power amplifier circuit comprising;
a bipolar transistor configured to amplify power of a radio frequency signal and to output an amplified signal, anda first diode element that is thermally coupled with the bipolar transistor; and
a control integrated circuit comprising;
a field-effect transistor, anda second diode element,wherein;
a drain terminal of the field-effect transistor is connected to a battery voltage,a bias signal is input to a gate terminal of the field-effect transistor and is supplied from a source terminal of the field-effect transistor to the bipolar transistor via a first wire,a cathode of the first diode element is grounded,an anode of the first diode element is connected to a cathode of the second diode element via a second wire, andan anode of the second diode element is connected to the gate terminal of the field-effect transistor.
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Abstract
A power amplifier module includes a power amplifier circuit and a control IC. The power amplifier circuit includes a bipolar transistor that amplifies power of an RF signal and outputs an amplified signal. The control IC includes an FET, which serves as a bias circuit that supplies a bias signal to the bipolar transistor. The FET is operable at a threshold voltage lower than that of the bipolar transistor, thereby making it possible to decrease the operating voltage of the power amplifier module.
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Citations
12 Claims
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1. A power amplifier module comprising:
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a power amplifier circuit comprising; a bipolar transistor configured to amplify power of a radio frequency signal and to output an amplified signal, and a first diode element that is thermally coupled with the bipolar transistor; and a control integrated circuit comprising; a field-effect transistor, and a second diode element, wherein; a drain terminal of the field-effect transistor is connected to a battery voltage, a bias signal is input to a gate terminal of the field-effect transistor and is supplied from a source terminal of the field-effect transistor to the bipolar transistor via a first wire, a cathode of the first diode element is grounded, an anode of the first diode element is connected to a cathode of the second diode element via a second wire, and an anode of the second diode element is connected to the gate terminal of the field-effect transistor. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A power amplifier module comprising:
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a power amplifier circuit comprising; a bipolar transistor configured to amplify power of a radio frequency signal and to output an amplified signal, and a first diode element that is thermally coupled with the bipolar transistor; and a control integrated circuit comprising; a field-effect transistor, and a second diode element, wherein; a drain terminal of the field-effect transistor is connected to a battery voltage, a bias signal is input to a gate terminal of the field-effect transistor and is supplied from a source terminal of the field-effect transistor to the bipolar transistor via a first wire, a cathode of the second diode element is grounded, an anode of the second diode element is connected to a cathode of the first diode element via a second wire, and an anode of the first diode element is connected to the gate terminal of the field-effect transistor via a third wire. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification