LIGHT-EMITTING DEVICE

• US 20180261722A1
• Filed: 05/08/2018
• Published: 09/13/2018
• Est. Priority Date: 03/11/2016
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Yang, Jong-in, Joo, Dong-hyuk, Kim, Jin-ha, Jeon, Joon-woo, Kwak, Jung-hee
• Granted Patent: US 10,978,614 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.

Claims

1-38. -38. (canceled)

39. A light-emitting device, comprising:

a substrate;

an emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially stacked on the substrate;

a current block layer on the emission structure;

a reflective layer on the current block layer;

a protection layer to cover the reflective layer; and

an electrode layer on the protection layer,

wherein the emission structure is disposed between the electrode layer and the substrate, and

the reflective layer is disposed between the electrode layer and the emission structure.

40. The light-emitting device as claimed in claim 39, further comprising a transparent electrode layer which is partially on the protection layer, the current block layer, and the emission structure.

41. The light-emitting device as claimed in claim 39, further comprising a concavo-convex structure between the emission structure and the substrate.

42. The light-emitting device as claimed in claim 39, wherein the protection layer is on both a side surface and an upper surface of the reflective layer.

43. The light-emitting device as claimed in claim 42, wherein the current block layer and the protection layer together surround the reflective layer.

44. The light-emitting device as claimed in claim 42, wherein the current block layer and the protection layer partially surround the reflective layer and exposing a portion of a surface of the reflective layer.

45. The light-emitting device as claimed in claim 39, wherein the current block layer includes a first contact hole, and the reflective layer is electrically connected to the emission structure via the first contact hole.

46. The light-emitting device as claimed in claim 39, further comprising a transparent electrode layer on the protection layer,

wherein the transparent electrode layer directly contacts the electrode layer and the emission structure.

47. The light-emitting device as claimed in claim 46, wherein the transparent electrode layer directly contacts current block layer and protection layer.

48. A light-emitting device, comprising:

a substrate;

an emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially stacked on the substrate;

a first current block layer on the emission structure in a first area;

a first reflective layer on the first current block layer;

a first protection layer that covers the first reflective layer;

a first electrode layer on the first protection layer and electrically connected to the second conductive type semiconductor layer; and

a second electrode layer on a second area of the emission structure and electrically connected to the first conductive type semiconductor layer;

wherein the emission structure is disposed between the first electrode layer and the substrate, and

the first reflective layer is disposed between the first electrode layer and the emission structure.

49. The light-emitting device as claimed in claim 48, further comprising a concavo-convex structure between the emission structure and the substrate.

50. The light-emitting device as claimed in claim 48, further comprising a transparent electrode layer which is partially on the first protection layer, the first current block layer, and the second conductive type semiconductor layer.

51. The light-emitting device as claimed in claim 48, wherein the first electrode layer is on the first current block layer.

52. The light-emitting device as claimed in claim 48, wherein the first protection layer is on both side surfaces and an upper surface of the first reflective layer.

53. The light-emitting device as claimed in claim 52, wherein the first current block layer and the first protection layer completely surround the first reflective layer.

54. The light-emitting device as claimed in claim 48, wherein the second electrode layer is in a mesa-type hole exposing the first conductive type semiconductor layer.

55. The light-emitting device as claimed in claim 54, wherein a bottom of the mesa-type hole is recessed to be lower than an upper surface of the first conductive type semiconductor layer.

56. The light-emitting device as claimed in claim 54, further including a second current block layer in an inner wall of the mesa-type hole.

57. The light-emitting device as claimed in claim 56, further comprising a second reflective layer on the second current block layer, and a second protection layer configured to cover the second reflective layer.

58. The light-emitting device as claimed in claim 57, wherein the second current block layer and the second protection layer are a second partial encapsulation layer surrounding the second reflective layer and exposing a portion of a surface of the second reflective layer.