ETCHING METHOD AND PLASMA PROCESSING APPARATUS
First Claim
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1. An etching method comprising:
- a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material;
a desorption step of desorbing the reaction layer after the reaction layer forming step; and
a removal step of removing the reaction layer remaining after the desorption step or a deposited film, different from the desorption step, whereinthe surface of the etching target material is etched by the reaction layer forming step and the desorption step.
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Abstract
The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.
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Citations
6 Claims
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1. An etching method comprising:
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a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material; a desorption step of desorbing the reaction layer after the reaction layer forming step; and a removal step of removing the reaction layer remaining after the desorption step or a deposited film, different from the desorption step, wherein the surface of the etching target material is etched by the reaction layer forming step and the desorption step. - View Dependent Claims (2, 3, 4, 5)
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6. A plasma processing apparatus comprising:
- a processing chamber for plasma-processing a sample containing an etching target material;
a radio frequency power source for supplying radio frequency power for generating plasma; and
a sample stage on which the sample is placed,further comprising a control unit for determining a wavelength signal increased in a reaction layer forming step and decreased in a desorption step in an interference spectrum obtained by monitoring a surface of the etching target material etched by the reaction layer forming step and the desorption step during the reaction layer forming step, and performing control to perform a removal step based on a difference between the obtained signal and the monitored signal, wherein the reaction layer forming step is a step of forming a reaction layer by adsorption of a gas on the surface of the etching target material, the desorption step is a step of desorbing the reaction layer after the reaction layer forming step, and the removal step is a step of removing the reaction layer remaining after the desorption step or a deposited film, different from the desorption step.
- a processing chamber for plasma-processing a sample containing an etching target material;
Specification